|
|
PDF MTA025B01V8 Data sheet ( Hoja de datos )
| Número de pieza | MTA025B01V8 | |
| Descripción | Dual P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTA025B01V8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C089V8
Issued Date : 2016.03.18
Revised Date :
Page No. : 1/9
Dual P-Channel Enhancement Mode MOSFET
MTA025B01V8
BVDSS
ID@VGS=-4.5V, TA=25°C
ID@VGS=-4.5V, TC=25°C
VGS=-4.5V, ID=-4.5A
RDSON(TYP) VGS=-2.5V, ID=-2.2A
VGS=-1.8V, ID=-2.2A
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
P-CH
-14V
-5.0A
-7.1A
22.8mΩ
30.7mΩ
49.0mΩ
Equivalent Circuit
MTA025B01V8
Outline
DFN3×3
G：Gate S：Source D：Drain
Pin 1
Ordering Information
Device
MTA025B01V8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTA025B01V8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C089V8
Issued Date : 2016.03.18
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.) :
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss
C oss
100
0
100
10
Crss
1 2 3 4 5 6 7 8 9 10
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
VDS=-5V
1 VDS=-10V
1.2
ID=-1mA
1
0.8
0.6
ID=-250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01 0.1
1
-ID, Drain Current(A)
10
2 VDS=-10V
ID=-5A
0
0 6 12 18 24 30
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDS(ON)
10 Limited
100μs
1ms
10ms
100ms
1
1s
0.1 TA=25°C, Tj=150°C
RθJA=84°C/W, VGS=-4.5V
Single Pulse
DC
0.01
0.01
0.1 1 10
-VDS, Drain-Source Voltage(V)
100
Maximum Drain Current vs Junction Temperature
7
6
5
4
3
2
1 VGS=-4.5V, RθJA=84°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTA025B01V8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTA025B01V8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTA025B01V8 | Dual P-Channel Enhancement Mode MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |