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PDF GP1603 Datasheet ( Hoja de datos )

Número de pieza GP1603
Descripción 16.0 Ampere Dual Common Cathode General Purpose Rectifier Diodes
Fabricantes Thinki Semiconductor 
Logotipo Thinki Semiconductor Logotipo

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GP1603 Hoja de datos, Descripción, Manual
GP1601 thru GP1607
®
GP1601 thru GP1607
Pb Free Plating Product
Pb
16.0 Ampere Dual Common Cathode General Purpose Rectifier Diodes
Features
Glass passivated chip junction
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Heatsink TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approxiamtely
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Positive
Common Cathode
Case
Negative
Common Anode
Suffix "A"
Case
Doubler
Tandem Polarity
Suffix "D"
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol GP GP GP GP GP GP GP Units
1601 1602 1603 1604 1605 1606 1607
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
@TC = 100 oC
I(AV)
16.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
IFSM
150
A
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@8.0A
Maximum DC Reverse Current @ TC=25 oC
at Rated DC Blocking Voltage @ TC=125 oC
Typical Junction Capacitance ( Note 1)
VF
IR
Cj
Typical Thermal Resistance (Note 2)
RθJC
Operating and Storage Temperature Range TJ ,TSTG
1.1
10
250
50
1.5
- 65 to + 150
V
uA
uA
pF
oC/W
oC
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Thermal Resistance from Junction to Case Mounted on Heatsink size 2” x 3” x 0.25” Al-Plate.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
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http://www.thinkisemi.com/

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