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PDF 2SC3585 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3585 | |
| Descripción | Silicon NPN RF Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3585
DESCRIPTION
·Low Noise and High Gain
NF = 1.8 dB TYP. @f = 2.0 GHz
Ga = 9 dB TYP. @f = 2.0 GHz
APPLICATIONS
·Designed for use in low-noise and small signal amplifiers
from VHF ~ UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
10 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
1.5 V
35 mA
0.2 W
150 ℃
-65~150
℃
isc website：www.iscsemi.cn
1
1 page  
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3585
VCE = 6 V, IC = 10 mA, ZO = 50Ω
f (MHz)
︱S11︱
∠S11
200
0.613
-37.0
400
0.406
-53.6
600
0.285
-56.0
800
0.214
-57.6
1000
0.156
-58.1
1200
0.130
-54.2
1400
0.105
-56.5
1600
0.065
-55.0
1800
0.042
-48.9
2000
0.018
-65.6
︱S21︱
16.141
10.096
7.640
5.564
4.787
3.876
3.573
3.058
2.997
2.590
∠S21
133.9
111.5
101.4
90.7
86.0
79.3
74.0
69.4
65.3
60.7
︱S12︱
0.021
0.053
0.064
0.089
0.095
0.119
0.141
0.158
0.178
0.202
∠S12
52.5
70.6
73.0
71.7
70.6
70.3
68.3
68.9
66.5
66.2
︱S22︱
0.781
0.651
0.590
0.548
0.526
0.506
0.489
0.470
0.439
0.426
∠S22
-19.4
-22.4
-24.0
-22.8
-23.3
-22.1
-24.8
-27.9
-31.4
-36.5
S-PARAMETER
S11e, S22e-FREQUENCY
CONDITION VCE = 6 V
200MHz Step
isc website：www.iscsemi.cn
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SC3585.PDF ] | |
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