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PDF 2SC3583 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3583 | |
| Descripción | Silicon NPN RF Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3583
DESCRIPTION
·Low Noise Figure, High Gain, and High Current Capability
Achieve a Very Wide Dynamic Range and Excellent Linearity.
·Low Noise and High Gain
NF = 1.2 dB TYP. @f = 1.0 GHz
Ga = 13 dB TYP. @f = 1.0 GHz
APPLICATIONS
·Designed for use in low-noise and small signal amplifiers
from VHF ~UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
10 V
VEBO
Emitter-Base Voltage
1.5 V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
65 mA
0.2 W
150 ℃
Tstg Storage Temperature Range
-65~150
℃
isc website：www.iscsemi.cn
1
1 page  
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3583
VCE = 8 V, IC = 20 mA, ZO = 50Ω
f (MHz)
︱S11︱
∠S11
200
0.366
-66.8
400
0.194
-88.9
600
0.124
-104.3
800
0.077
-132.0
1000
0.063
-156.4
1200
0.065
179.5
1400
0.074
168.0
1600
0.108
147.0
1800
0.116
137.6
2000
0.134
131.2
︱S21︱
19.757
10.502
7.591
5.446
4.653
3.754
3.460
2.934
2.870
2.479
∠S21
116.9
98.8
91.1
82.0
77.6
71.6
66.5
61.9
58.2
53.4
︱S12︱
0.033
0.055
0.072
0.095
0.107
0.135
0.164
0.178
0.205
0.221
∠S12
62.6
70.6
74.6
73.2
72.1
72.1
70.1
69.6
66.3
64.0
︱S22︱
0.587
0.485
0.453
0.419
0.413
0.392
0.369
0.347
0.333
0.312
∠S22
-22.5
-23.8
-24.3
-23.2
-24.2
-26.4
-29.9
-32.2
-34.3
-42.1
S-PARAMETER
S11e, S22e-FREQUENCY
CONDITION VCE = 8 V
200MHz Step
isc website：www.iscsemi.cn
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SC3583.PDF ] | |
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