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PDF 2N5551 Data sheet ( Hoja de datos )
| Número de pieza | 2N5551 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·NPN high-voltage transistor
·Low current (max. 300 mA)
·High voltage (max. 160 V)
·Complements to 2N5401.
isc Product Specification
2N5551
APPLICATIONS
·Designed for Switching and amplification
in high voltage applications , such as telephony
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180 V
VCEO
Collector-Emitter Voltage
160 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
0.3 A
ICM Collector Current-Peak
0.6 A
IBM Base Current-Peak
PC
Collector Power Dissipation
@ Ta<50℃
0.1 A
0.63 W
J Junction Temperature
Tstg Storage Temperature Range
150 ℃
-65~150 ℃
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N5551.PDF ] | |
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