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PDF 2N3866 Data sheet ( Hoja de datos )
| Número de pieza | 2N3866 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN Planar Epitaxial Overlay Transistor
2N3866
DESCRIPTION
·This type is primarily intended for class-A, B or C amplifiers,
Frequency multiplier and oscillator circuits.
·High Gain Bandwidth Product
fT= 500 MHz (Min.)
·Low Collector Capacitance;
CC = 3 pF Max.
APPLICATIONS
·Designed for use in output, driver or pre-driver stages in
VHF and UHF equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
55 V
VCER
Collector-Emitter Voltage RBE= 10Ω
55
V
VCEO Collector-Emitter Voltage
30 V
VEBO
Emitter-Base Voltage
3.5 V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
0.4 A
3.5 W
200 ℃
Tstg Storage Temperature Range
-65~+200
℃
isc website：www.iscsemi.cn
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1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N3866.PDF ] | |
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