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PDF KTC4369 Data sheet ( Hoja de datos )
| Número de pieza | KTC4369 | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KTC4369
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
Good Linearity of hFE.
Complementary to KTA1658.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Storage Temperature Range
Tstg
RATING
30
30
5
3
0.3
15
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
LL
M
DD
NN
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5
R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
ICBO
IEBO
V(BR)CEO
DC Current Gain
hFE(1) (Note)
hFE(2)
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Voltage
VBE
Transition Frequency
fT
Collector Output Capacitance
Cob
Note : hFE(1) Classification O:70~140, Y:120~240
TEST CONDITION
VCB=20V, IE=0
VEB=5V, IC=0
IC=10mA, IB=0
VCE=2V, IC=0.5A
VCE=2V, IC=2.5A
IC=2A, IB=0.2A
VCE=2V, IC=0.5A
VCE=2V, IC=0.5A
VCB=10V, IE=0, f=1MHz
MIN.
-
-
30
70
25
-
-
-
-
TYP.
-
-
-
-
-
0.3
0.75
100
35
MAX.
1.0
1.0
-
240
-
0.8
1.0
-
-
UNIT
A
A
V
V
V
MHz
pF
2007. 5. 22
Revision No : 2
1/2
1 page | ||
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