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PDF KTB1368 Data sheet ( Hoja de datos )
| Número de pieza | KTB1368 | |
| Descripción | TRIPLE DIFFUSED PNP TRANSISTOR | |
| Fabricantes | KEC | |
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SEMICONDUCTOR
TECHNICAL DATA
KTB1368
TRIPLE DIFFUSED PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
Good Linearity of hFE.
Complementary to KTD2060.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
-80
-80
-5
-4
-0.4
25
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
LL
M
DD
NN
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5
R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE
fT
VCB=-80V, IE=0
VEB=-5V, IC=0
IC=-50mA, IB=0
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-3A
IC=-3A, IB=-0.3A
VCE=-5V, IC=-3A
VCE=-5V, IC=-0.5A
Collector Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
Note : hFE(1) Classification R:40 80, O:70 140, Y:120 240
MIN.
-
-
-80
40
15
-
-
-
-
TYP.
-
-
-
-
-
-1.0
-1.0
9.0
130
MAX.
-30
-100
-
240
-
-1.7
-1.5
-
-
UNIT
A
A
V
V
V
MHz
pF
2007. 5. 21
Revision No : 2
1/2
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