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PDF KTA1225L Data sheet ( Hoja de datos )
| Número de pieza | KTA1225L | |
| Descripción | EPITAXIAL PLANAR PNP TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KTA1225D/L
EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE APPLICATION.
FEATURES
High Transition Frequency : fT=100MHz(Typ.).
Complementary to KTC2983D/L
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
VCBO
VCEO
VEBO
IC
IB
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
-160
-160
-5
-1.5
-0.3
1.0
10
150
-55 150
UNIT
V
V
V
A
A
W
A
C
H
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_ 0.2
5.0 +_0.2
1.10+_ 0.2
2.70+_ 0.2
2.30+_ 0.1
1.00 MAX
2.30+_ 0.2
0.5+_ 0.1
2.00 +_0.20
0.50+_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00+_ 0.10
0.95 MAX
DPAK
AI
CJ
H
G
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0+_ 0.2
P
D 1.10+_ 0.2
E 9.50+_ 0.6
F 2.30+_ 0.1
G 0.76+_ 0.1
H 1.0 MAX
I 2.30+_ 0.2
J 0.5 +_ 0.1
L K 2.0+_ 0.2
L 0.50+_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
Collector-Emitter Breakdown Voltage
V(BR)CEO
Emitter-Base Breakdown Voltage
V(BR)EBO
DC Current Gain
hFE(Note)
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Voltage
VBE
Transition Frequency
fT
Collector Output Capacitance
Cob
Note : hFE Classification O:70~140, Y:120~240
TEST CONDITION
VCB=-160V, IE=0
VEB=-5V, IC=0
IC=-10mA, IB=0
IE=-1mA, IC=0
VCE=-5V, IC=-100mA
IC=-500mA, IB=-50mA
VCE=-5V, IC=-500mA
VCE=-10V, IC=-100mA
VCB=-10V, IE=0, f=1MHz
IPAK
MIN.
-
-
-160
-5.0
70
-
-
-
-
TYP.
-
-
-
-
-
-
-
100
30
MAX.
-1.0
-1.0
-
-
240
-1.5
-1.0
-
-
UNIT
A
A
V
V
V
V
MHz
pF
2003. 3. 27
Revision No : 2
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KTA1225L.PDF ] | |
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