|
|
Número de pieza | KTA1045D | |
Descripción | EPITAXIAL PLANAR PNP TRANSISTOR | |
Fabricantes | KEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de KTA1045D (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! SEMICONDUCTOR
TECHNICAL DATA
KTA1045D/L
EPITAXIAL PLANAR PNP TRANSISTOR
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES
High breakdown voltage VCEO 120V, high current 1A.
Low saturation voltage and good linearity of hFE.
Complementary to KTC2025D/L
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
ICP
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Storage Temperature Range
Tj
Tstg
RATING
-120
-120
-5
-1
-2
1.0
8
150
-55 150
UNIT
V
V
V
A
W
A
C
H
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_ 0.2
5.0 +_ 0.2
1.10+_ 0.2
2.70+_ 0.2
2.30 +_ 0.1
1.00 MAX
2.30 +_ 0.2
0.5 +_ 0.1
2.00 +_ 0.20
0.50 +_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00 +_ 0.10
0.95 MAX
DPAK
AI
CJ
H
G
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0 +_ 0.2
P
D 1.10+_ 0.2
E 9.50 +_ 0.6
F 2.30 +_ 0.1
G 0.76 +_ 0.1
H 1.0 MAX
I 2.30 +_ 0.2
J 0.5 +_ 0.1
L K 2.0 +_ 0.2
L 0.50 +_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut of Current
Emitter Cut of Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE(1) Note
hFE(2)
fT
Cob
VCE(sat)
VBE(sat)
Turn-on Time
ton
Switching Time
Turn-off Time
toff
TEST CONDITION
VCB=-50V, IE=0
VEB=-4V, IC=0
IC=-10 A, IE=0
IC=-1mA, IB=0
IE=-10 A, IC=0
VCE=-5V, IC=-50mA
VCE=-5V, IC=-500mA
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
I B2
IB1
1Ω
20µsec 100Ω
24Ω
1uF 1uF
Storage Time
tstg
(Note) : hFE(1) Classification Y:100 200, GR:160 320
2V -12V
VCE =-12V
IC =10I B1 =-10IB2 =500mA
IPAK
MIN.
-
-
-120
-120
-5
100
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
110
30
-0.15
-0.85
- 80
MAX.
-1
-1
-
-
-
320
-
-
-
-0.4
-1.2
-
UNIT
A
A
V
V
V
MHz
pF
V
V
- 100 -
nS
- 600 -
2003. 3. 27
Revision No : 5
1/2
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet KTA1045D.PDF ] |
Número de pieza | Descripción | Fabricantes |
KTA1045D | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
KTA1045L | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |