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PDF BC807W Data sheet ( Hoja de datos )
| Número de pieza | BC807W | |
| Descripción | EPITAXIAL PLANAR PNP TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Complementary to BC817W.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
-50
-45
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -500
Emitter Current
IE 500
Collector Power Dissipation
PC 100
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
UNIT
V
V
V
mA
mA
mW
BC807W
EPITAXIAL PLANAR PNP TRANSISTOR
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2 B 1.25+_ 0.15
13
C 0.90+_ 0.10
D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65
P H 0.15+0.1/-0.06
J 1.30
K 0.00~0.10
L
HM
0.70
0.42 +_0.10
NK
N
N 0.10 MIN
P 0.1 MAX
1. EMITTER
2. BASE
3. COLLECTOR
USM
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
VCB=-20V, IE=0
VEB=-5V, IC=0
VCE=-1V, IC=-100mA
VCE=-1V, IC=-500mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-500mA
VCE=-5V, IC=-10mA, f=100MHz
Collector Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
Note : hFE Classification 16:100 250 , 25:160 400 , 40:250 630
MIN.
-
-
100
40
-
-
80
-
TYP.
-
-
-
-
-
-
-
9
MAX.
-0.1
-0.1
630
-
-0.7
-1.2
-
-
UNIT
A
A
V
V
MHz
pF
MARK SPEC
TYPE.
MARK
BC807W-16
1M
BC807W-25
1N
BC807W-40
1R
2008. 9. 2
Revision No : 0
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BC807W.PDF ] | |
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