|
|
PDF KTX321U Data sheet ( Hoja de datos )
| Número de pieza | KTX321U | |
| Descripción | EPITAXIAL PLANAR PNP TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de KTX321U (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
SEMICONDUCTOR
TECHNICAL DATA
POWER MANAGEMENT.
FEATURES
Including two devices in US6.
(Ultra Super mini type with 6 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
MARKING
654
Q2
Type Name
BRQ1
Lot No.
12 3
123
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
KTX321U
EPITAXIAL PLANAR PNP TRANSISTOR
N CHANNEL MOS FIELD EFFECT TRANSISTOR
B
B1
1 6 DIM MILLIMETERS
A 2.00+_ 0.20
2 5 A1 1.3+_ 0.1
B 2.1+_ 0.1
3
4 D B1
1.25+_ 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
H 0.9+_ 0.1
T T 0.15+0.1/-0.05
G
1. Q1 EMITTER
2. Q1 BASE
3. Q2 DRAIN
4. Q2 SOURCE
5. Q2 GATE
6. Q1 COLLECTOR
US6
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP *
PC *
Tj
Tstg
* Single Pulse PW=1mS.
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
RATING
-15
-12
-6
-500
-1
150
150
-55 150
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
VDS
VGSS
ID
PC **
Tch
Tstg
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
RATING
30
20
100
150
150
-55 150
2008. 9. 23
Revision No : 1
UNIT
V
V
V
mA
A
mW
UNIT
V
V
mA
mW
1/6
1 page  
KTX321U
Q2 (N CHANNEL MOS FIELD EFFECT TRANSISTOR)
ID - VDS
100
2.5V
80 2.2V
COMMON SOURCE
Ta=25 C
60 2.0V
40 1.8V
1.6V
20
1.4V
VGS =1.2V
0
0 2 4 6 8 10 12
DRAIN-SOURCE VOLTAGE VDS (V)
100
30
10
3
1
0.3
0.1
0.03
0.01
0
IDR - VDS
COMMON SOURCE
VGS =0
Ta=25 C
D
G I DR
S
-0.4 -0.8 -1.2 -1.6
DRAIN-SOURCE VOTAGE VDS (V)
Yfs - ID
300
COMMON SOURCE
V DS =3V
Ta=25 C
100
50
30
10
5
1
2008. 9. 23
3 5 10
30 50 100
DRAIN CURRENT ID (mA)
Revision No : 1
ID - VDS
(LOW VOLTAGE REGION)
1.0
2.5V
0.8
1.2V
1.15V
COMMON
SOURCE
Ta=25 C
0.6
0.4
0.2
0
0
1.1V
1.05V
1.0V
VGS =0.9V
0.1 0.2 0.3 0.4 0.5 0.6
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGS
100
30
10
3
1
0.3
0.1
0.03
0.01
0
COMMON SOURCE
VDS =3V
Ta=25 C
Ta=-25 C
1 2 345
GATE-SOURCE VOTAGE VGS (V)
C - VDS
100
50
30
C oss
C iss
10
5
3
COMMON SOURCE
VGS =0
f=1MHz
Ta=25 C
Crss
1
0.1 0.3 0.5 1
3 5 10
20
DRAIN-SOURCE VOLTAGE VDS (V)
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet KTX321U.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| KTX321U | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |