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Número de pieza | KF19N20D | |
Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
Fabricantes | KEC | |
Logotipo | ||
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No Preview Available ! SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
FEATURES
VDSS(Min.)= 200V, ID= 15A
Drain-Source ON Resistance : RDS(ON)=0.155
Qg(typ.) =21nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
200
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
TC=25
Derate above25
ID
IDP
EAS
EAR
dv/dt
PD
15
9.4
45*
215
4.9
4.5
83.3
0.67
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Thermal Characteristics
Tstg -55 150
Thermal Resistance, Junction-to-Case RthJC
1.5
Thermal Resistance, Junction-to-
Ambient
RthJA
110
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KF19N20D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF19N20D
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_ 0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KF19N20I
AH
CJ
M
N
G
FF
123
P
L
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MILLIMETERS
6.6 +_ 0.2
6.1 +_ 0.2
5.34 +_0.3
0.7 +_ 0.2
9.3 +_0.3
2.3+_ 0.2
0.76 +_ 0.1
2.3 +_ 0.1
0.5+_ 0.1
1.8 +_ 0.2
0.5 +_ 0.1
1.0 +_ 0.1
0.96 MAX
1.02 +_ 0.3
PIN CONNECTION
IPAK(1)
2014. 12. 01
Revision No : 2
1/6
1 page KF19N20D/I
Fig12. Gate Charge
0.8 VDSS
1.0 mA
VGS
VGS
5V
RL
ID
VDS
Qgs Qgd
Qg
Fig13. Single Pulsed Avalanche Energy
50V
25Ω
10 V
VGS
BVDSS
L
IAS
VDS
VDD
EAS=
1
2
LIAS2
BVDSS
BVDSS - VDD
ID(t)
Fig14. Resistive Load Switching
0.5 VDSS
25 Ω
10V VGS
tp
VDS
90%
RL
VGS 10%
td(off)
VDS td(on) tr
tf
ton toff
Q
VDS(t)
Time
2014. 12. 01
Revision No : 2
5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet KF19N20D.PDF ] |
Número de pieza | Descripción | Fabricantes |
KF19N20D | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF19N20F | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF19N20I | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
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