(PDF) KML0D4N20E Datasheet - N-Ch Trench MOSFET

Número de pieza	KML0D4N20E
Descripción	N-Ch Trench MOSFET
Fabricantes	KEC
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS=20V, ID=0.4A Drain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V : RDS(ON)=0.85 @ VGS=2.5V : RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL N-Ch UNIT Drain-Source Voltage Gate-Source Voltage VDSS 20 V VGSS 6V Drain Current DC @TA=25 DC @TA=85 Pulsed Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range (Note 1) (Note 1) ID 400 330 mA (Note 1) IDP 1600 (Note 2) PD 210 mW Tj 150 Tstg -55 150 Thermal Resistance, Junction to Ambient (Note 2) RthJA 600 /W Note 1) Drain current limited by maximum junction temperature. Note 2) Surface Mounted on 1 1 FR4 Board. KML0D4N20E N-Ch Trench MOSFET 2014. 4. 17 Revision No : 2 1/4 1 page

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PDF KML0D4N20E Data sheet ( Hoja de datos )