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PDF KMD6D0DN40Q Data sheet ( Hoja de datos )
| Número de pieza | KMD6D0DN40Q | |
| Descripción | Dual N-Ch Trench MOSFET | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converters.
FEATURES
VDSS=40V, ID=6A.
Drain-Source ON Resistance.
RDS(ON)=38m (Max.) @VGS=10V
RDS(ON)=50m (Max.) @VGS=4.5V
Super High Dense Cell Design
Very fast switching
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain Source Voltage
Gate Source Voltage
Drain Current
Ta=25
Pulsed(Note1)
Peak Diode Recovery dv/dt (Note 2)
VDSS
VGSS
ID *
IDP
dv/dt
40 V
12 V
6A
24 A
4.5 V/ns
Peak Diode Recovery di/dt
di/dt 200 A/us
Single pulsed Avalanche Energy (Note 3)
Repetitive Avalanche Energy (Note 1)
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
EAS
EAR
Tj
Tstg
RthJA*
66
2.7
-50~150
-50~150
62.5
mJ
mJ
/W
* : Surface Mounted on FR4 Board (25mm 25mm, 1.5t, t 10sec)
KMD6D0DN40Q
Dual N-Ch Trench MOSFET
DP
H
T
G
L
A
DIM MILLIMETERS
A 4.85 +_ 0.2
B1 3.94 +_ 0.2
85
B2 6.02+_ 0.3
D 0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H 1.63 +_ 0.2
14
L 0.65 +_ 0.2
P 1.27
T 0.20+0.1/-0.05
FLP-8
Marking
Type Name
KMD6D0DN
40Q
101
Lot No.
PIN CONNECTION (TOP VIEW)
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
1
2
3
4
8
7
6
5
2012. 7. 26
Revision No : 0
1/5
1 page  
KMD6D0DN40Q
Fig. 10 Gate Charge
Schottky
ID Diode
0.8 VDSS
1.0 mA
VGS
ID
VDS
VGS
10 V
Qgs Qgd
Qg
Q
Fig. 11 Resistive Load Switching
0.5 VDSS
6Ω
10 V
VGS
RL
VDS
VDS
90%
VGS 10%
td(on)
tr
ton
td(off)
tf
toff
2012. 7. 26
Revision No : 0
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet KMD6D0DN40Q.PDF ] | |
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