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PDF KMB7D0DN40QB Data sheet ( Hoja de datos )
| Número de pieza | KMB7D0DN40QB | |
| Descripción | Dual N-Ch Trench MOSFET | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for power management in PC, portable
equipment and battery powered systems.
FEATURES
VDSS=40V, ID=7A.
Drain to Source on Resistance.
RDS(ON)=25m (Max.) @VGS=10V
RDS(ON)=45m (Max.) @VGS=4.5V
Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING UNIT
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Ta=25 (Note1)
Pulsed
VDSS
VGSS
ID
IDP
40 V
20 V
7A
36 A
Drain to Source Diode Forward Current
IS 7 A
Ta=25 (Note1)
Drain Power Dissipation
Ta=100 (Note1)
Maximum Junction Temperature
Storage Temperature Range
2W
PD
1.44 W
Tj -55~150
Tstg -55~150
Thermal Resistance, Junction to Ambient(Note1) RthJA 62.5 /W
Note1) Surface Mounted on 1 1 FR4 Board., t 10sec
KMB7D0DN40QB
Dual N-Ch Trench MOSFET
DP
H
T
G
U
L
A
DIM MILLIMETERS
A 4.85+_ 0.2
85
B1 3.94+_ 0.2
B2 6.02+_ 0.3
B1 B2
D 0.4+_ 0.1
G 0.15+0.1/-0.05
14
H 1.63+_ 0.2
L 0.65+_ 0.2
P 1.27
T 0.20+0.1/-0.05
U 0.1 MAX
FLP-8
KMB7D0DN
40QB
PIN CONNECTION (TOP VIEW)
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
1
2
3
4
8
7
6
5
2012. 1. 13
Revision No : 0
1/5
1 page  
KMB7D0DN40QB
2012. 1. 13
Revision No : 0
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet KMB7D0DN40QB.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| KMB7D0DN40QA | Trench MOSFET | KEC |
| KMB7D0DN40QB | Dual N-Ch Trench MOSFET | KEC |
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