(PDF) KMA2D4P20SA Datasheet - P-Ch Trench MOSFET

Número de pieza	KMA2D4P20SA
Descripción	P-Ch Trench MOSFET
Fabricantes	KEC
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for use as a load switch in battery powered applications. KMA2D4P20SA P-Ch Trench MOSFET FEATURES VDSS=-20V, ID=-2.4A. Drain to Source on-state Resistance. : RDS(ON)=100m (Max.) @ VGS=-4.5V. : RDS(ON)=175m (Max.) @ VGS=-2.5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage VDSS -20 V Gate to Source Voltage VGSS 12 V Drain Current DC@Ta=25 (Note1) ID -2.4 A Pulsed (Note1) IDP -9 Ta=25 Drain Power Dissipation Ta=100 (Note1) (Note1) 1.25 PD W 0.6 Maximum Junction Temperature Storage Temperature Range Tj 150 Tstg -55 150 Thermal Resistance, Junction to Ambient (Note1) RthJA Note1)Surface Mounted on 1 1 FR4 Board, t 5sec. 100 /W E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 P7 Q 0.1 MAX M SOT-23 Marking KB2Type Name Lot No. PIN CONNECTION (TOP VIEW) D 3 3 21 GS 21 2011. 12. 22 Revision No : 3 1/4 1 page

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