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PDF 2MBI200S-120 Data sheet ( Hoja de datos )
| Número de pieza | 2MBI200S-120 | |
| Descripción | IGBT Module | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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2MBI200S-120
IGBT Module
1200V / 200A 2 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Rating
Unit
Collector-Emitter voltage
VCES
1200
V
Gate-Emitter voltaga
VGES
±20 V
Collector Continuous Tc=25°C IC
300 A
current
Tc=80°C
200 A
1ms Tc=25°C IC pulse
600 A
Tc=80°C
400 A
-IC 200 A
1ms
-IC pulse
400 A
Max. power dissipation
PC
1500
W
Operating temperature
Tj
+150
°C
Storage temperature
Tstg
-40 to +125
°C
Isolation voltage *1
Vis AC 2500 (1min. ) V
www.DataSheet4U.Scocmrew torque
Mounting *2 3.5 N·m
Terminals *2 4.5 N·m
Equivalent Circuit Schematic
C2E1
C1 E2
G1 E1
G2 E2
*1 : Aii terminals should be connected together when isolation test will be done
*2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6)
Terminals 3.5 to 4.5 N·m(M6)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbol
Characteristics
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
ICES
IGES
VGE(th)
VCE(sat)
Min.
–
–
5.5
–
Typ.
–
–
7.2
2.3
Max.
1.0
0.4
8.5
2.6
– 2.8 –
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Cies
Coes
Cres
ton
– 24000
–
– 5000 –
– 4400 –
– 0.35 1.2
tr – 0.25 0.6
Turn-off time
tr(i) – 0.1 –
toff – 0.45 1.0
Forward on voltage
tf – 0.08 0.3
VF – 2.3 3.0
– 2.0 –
Reverse recovery time trr – – 0.35
Conditions
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=200mA
Tc=25° C VGE=15V, IC=200A
Tc=125°C
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=200A
VGE=±15V
RG=4.7 ohm
Tj=25°C
Tj=125°C
IF=200A
IF=200A, VGE=0V
Unit
mA
µA
V
V
pF
µs
V
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Min.
Typ.
Max.
Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*2
–
–
–
–
–
0.025
0.085 IGBT
0.18 Diode
– the base to cooling fin
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Unit
°C/W
°C/W
°C/W
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2MBI200S-120.PDF ] | |
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