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PDF THGBM4G7D2GBAIE Data sheet ( Hoja de datos )
| Número de pieza | THGBM4G7D2GBAIE | |
| Descripción | 16GB e-MMC Module | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de THGBM4G7D2GBAIE (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
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THGBM4G7D2GBAIE
16GB THGBM4G7D2GBAIE
INTRODUCTION
TOSHIBA e-MMC Module
THGBM4G7D2GBAIE is 16-GByte density of e-MMC Module product housed in 169 ball BGA package. This unit is
utilized advanced TOSHIBA NAND flash device(s) and controller chip assembled as Multi Chip Module.
THGBM4G7D2GBAIE has an industry standard MMC protocol for easy use.
FEATURES
THGBM4G7D2GBAIE Interface
THGBM4G7D2GBAIE has the JEDEC/MMCA Version 4.41 interface with either 1-I/O, 4-I/O and 8-I/O mode
support.
Pin Connection
P-TFBGA169-1216-0.50A4 (12 x 16mm, H1.2mm max. package)
14
13 NC
12
11 NC
10
9 NC
8
7
6 NC
5
4 NC
3
2 NC
1
NC
NC
NC NC NC NC NC NC NC NC NC NC NC NC NC NC
NC NC NC NC NC NC NC NC NC NC NC NC NC NC
NC NC NC NC NC NC NC NC NC NC NC NC NC NC
NC NC NC
NC NC NC
NC NC NC
RFU RFU RFU Vss Vcc RFU
NC NC RFU
NC NC NC
RFU
Vcc NC NC NC
NC NC NC
RFU NC NC
RFU
Vss
Top View
Vss RFU
NC NC NC
NC NC RFU
RFU DAT7 VccQ
Vcc
RFU
CLK NC VssQ
DAT2 DAT6 RFU
RFU Vcc Vss RFU RFU RST_n
CMD VssQ VccQ
DAT1 DAT5 VssQ NC Index
VccQ VccQ VssQ
DAT0 DAT4 NC NC NC NC RFU NC NC NC NC NC NC VccQ
NC DAT3 VDDi NC NC NC NC NC NC NC NC NC VssQ NC
NC NC NC NC NC NC NC NC NC NC NC NC NC NC
NC
NC
NC
NC
NC
NC
NC
NC
A B C D E F G H J K L M N P R T U V W Y AA AB AC AD AE AF AG AH
Pin Number Name Pin Number Name Pin Number
H3
DAT0
K2
VDDi
T10
H4 DAT1 K4 VssQ U5
H5 DAT2 K6 VccQ U8
J2 DAT3 M6 Vcc U9
J3 DAT4 M7 Vss W4
J4 DAT5 N5 Vcc W5
J5 DAT6 P5 Vss W6
J6
DAT7
R10
Vss
Y2
NC: No Connect, can be connected to ground or left floating.
RFU: Reserved for Future Use, should be left floating for future use.
Name
Vcc
RST_n
Vss
Vcc
VccQ
CMD
CLK
VssQ
Pin Number
Y4
Y5
AA3
AA4
AA5
AA6
Name
VccQ
VssQ
VccQ
VssQ
VccQ
VssQ
1 Jun. 29th, 2011
1 page  
THGBM4G7D2GBAIE
Density Specifications
Density
Part Number
Interleave
Operation
User Area Density
[Bytes]
16-Gbytes
THGBM4G7D2GBAIE
Interleave
15,938,355,200
1) User area density shall be reduced if enhanced user data area is defined.
SEC_COUNT in
Extended CSD
0x01DB0000
Register Informations
OCR Register
OCR bit
VDD Voltage window
Value
[6:0]
Reserved
000 0000b
[7]
1.70-1.95
1b
[14:8]
2.0-2.6
000 0000b
[23:15]
2.7-3.6
1 1111 1111b
[28:24]
Reserved
0 0000b
[30:29]
Access Mode
10b
[31] ( card power up status bit (busy) )1
1) This bit is set to LOW if the card has not finished the power up routine.
CID Register
CID-slice
[127:120]
[119:114] *
[113:112] *
[111:104] *
[103:56]
[55:48]
[47:16]
[15:8]
[7:1]
[0]
Name
Manufacturer ID
Reserved
Card/BGA
OEM/Application ID
Product name
Product revision
Product serial
Manufacturing date
CRC7 checksum
Not used, always ‘1’
Field
MID
-
CBX
OID
PNM
PRV
PSN
MDT
CRC
-
Width
8
6
2
8
48
8
32
8
7
1
Value
0001 0001b
0b
01b
0b
0x30 31 36 47 34 41 (016G4A)
0x00
Serial number
see-JEDEC Specification
CRC7
1b
5 Jun. 29th, 2011
5 Page 
Bus Signal Levels
THGBM4G7D2GBAIE
Open-Drain Mode Bus Signal Level
Parameter
Output HIGH voltage
Output LOW voltage
Symbol
VOH
VOL
Test Conditions
IOH = -100uA
IOL = 2mA
Min
VccQ - 0.2
⎯
Max
⎯
0.3
Unit
V
V
Push-Pull Mode Bus Signal Level (High-Voltage)
Parameter
Output HIGH voltage
Symbol
Test Conditions
VOH IOH = -100uA @ VDD min
Min
0.75 * VccQ
Max Unit
⎯V
Output LOW voltage
VOL IOL = 100uA @ VDD min
⎯ 0.125 * VccQ V
Input HIGH voltage
VIH
0.625* VccQ VccQ + 0.3
V
Input LOW voltage
VIL
VSS - 0.3
0.25 * VccQ V
Push-Pull Mode Bus Signal Level (Dual-Voltage)
Parameter
Output HIGH voltage
Symbol
Test Conditions
VOH IOH = -2mA @ VDD min
Output LOW voltage
VOL IOL = 2mA @ VDD min
Input HIGH voltage
VIH
Input LOW voltage
VIL
Min
VccQ - 0.45
⎯
0.65 * VccQ
VSS - 0.3
Max Unit
⎯V
0.45 V
VccQ + 0.3
V
0.35 * VccQ V
11 Jun. 29th, 2011
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet THGBM4G7D2GBAIE.PDF ] | |
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