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PDF 1MBI3600U4D-170 Data sheet ( Hoja de datos )
| Número de pieza | 1MBI3600U4D-170 | |
| Descripción | IGBT MODULE | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1MBI3600U4D-170 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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1MBI3600U4D-170
IGBT MODULE (U series)
1700V / 3600A / 1 in one package
IGBT Modules
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Conditions
Continuous
Collector current
Ic pulse
1ms
-Ic
-Ic pulse
1ms
Collector power dissipation
Pc 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
AC : 1min.
Mounting (*2)
Screw torque
Main Terminals (*2)
Sense Terminals (*2)
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Maximum ratings
1700
±20
4800
3600
9600
7200
3600
7200
18650
150
-40 to +125
3400
5.75
10
2.5
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip
Symbols
Conditions
ICES VGE = 0V, VCE = 1700V
IGES VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 3600mA
VCE (sat)
(main terminal) VGE = 15V
VCE (sat)
IC = 3600A
(chip)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Cies
VGE = 0V, VCE = 10V, f = 1MHz
ton
tr
toff
VCC = 900V, IC = 3600A
VGE = ±15V, Tj = 125°C
Rgon = 1Ω, Rgoff = 0.18Ω
tf
VF
(main terminal) VGE = 0V
VF IF = 3600A
(chip)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
trr IF = 3600A
R lead
Characteristics
min. typ. max.
- - 1.0
- - 4800
5.5 6.5 7.5
- 2.57 2.77
- 2.97 -
- 2.25 2.40
- 2.65 -
- 336 -
- 1.80 -
- 0.85 -
- 1.30 -
- 0.35 -
- 2.12 2.52
- 2.32 -
- 1.80 2.15
- 2.00 -
- 0.35 -
- 0.089 -
Units
V
V
A
W
°C
°C
VAC
N·m
Units
mA
nA
V
V
nF
µs
V
µs
mΩ
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Contact thermal resistance (1device)
Rth(j-c)
Rth(c-f)
IGBT
FWD
with Thermal Compound (*3)
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 0.0067
- - 0.011
- 0.004 -
Units
°C/W
1
1 page  
1MBI3600U4D-170
Outline Drawings, mm
IGBT Modules
Equivalent Circuit Schematic
sense collector C
C
gate G
sense emitter E
E
main collector
C
E
main emitter
C
E
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 1MBI3600U4D-170.PDF ] | |
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