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PDF 2N7000A Data sheet ( Hoja de datos )
| Número de pieza | 2N7000A | |
| Descripción | FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low RDS(ON).
Voltage controolled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Drain-Source Voltage
Drain-Gate Voltage (RGS 1 )
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VDSS
VDGR
VGSS
ID
IDP
PD
Tj
Tstg
RATING
60
60
20
200
500
400
150
-55 150
UNIT
V
V
V
mA
mW
2N7000A
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
BC
KE
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00+_ 0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. SOURCE
2. GATE
3. DRAIN
TO-92
EQUIVALENT CIRCUIT
D
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
BVDSS
IDSS
IGSSF
Gate-Body Leakage, Reverse
IGSSR
TEST CONDITION
VGS=0V, ID=10 A
VDS=48V, VGS=0V
VGS=15V, VDS=0V
VGS=-15V, VDS=0V
MIN.
60
-
-
-
TYP.
-
-
-
-
MAX.
-
1
1
-1
UNIT
V
A
A
A
2009. 11. 17
Revision No : 3
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N7000A.PDF ] | |
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