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PDF MTN10N70FP Data sheet ( Hoja de datos )

Número de pieza MTN10N70FP
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes CYStech 
Logotipo CYStech Logotipo



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No Preview Available ! MTN10N70FP Hoja de datos, Descripción, Manual

CYStech Electronics Corp.
Spec. No. : C860FP
Issued Date : 2016.03.07
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTN10N70FP BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=5A
700V
10A
0.66Ω
Description
The MTN10N70FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Insulating package, front/back side insulating voltage=2500V(AC)
RoHS compliant package
Applications
Open Framed Power Supply
Adapter
STB
Ordering Information
Device
MTN10N70FP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN10N70FP
CYStek Product Specification

1 page




MTN10N70FP pdf
CYStech Electronics Corp.
Spec. No. : C860FP
Issued Date : 2016.03.07
Revised Date :
Page No. : 5/10
Typical Characteristics(Cont.)
10000
Capacitance vs Reverse Voltage
Brekdown Voltage vs Ambient Temperature
1.4
1000 Ciss 1.2
100 Coss 1.0
10 Crss
f=1MHz
1
0 5 10 15 20 25
VDS, Drain-to-Source Voltage(V)
30
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
10μs
100μs
1ms
10ms
1
100ms
0.1 TC=25°C, Tj(max)=150°C
VGS=10V, RθJC=1.9°C/W
Single pulse
0.01
1
10 100
VDS, Drain-Source Voltage(V)
DC
1000
Maximum Drain Current vs Case Temperature
12
10
8
6
4
2 VGS=10V, RθJC=1.9°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
0.8
ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Gate Charge Characteristics
10
VDS=140V
8 VDS=350V
6
4 VDS=560V
2
0
0
1.4
ID=10A
6 12 18 24 30 36 42 48
Qg, Total Gate Charge(nC)
Threshold Voltage vs Junction Tempearture
1.2
ID=1mA
1
0.8
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN10N70FP
CYStek Product Specification

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