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PDF MTN10N65BE3 Datasheet ( Hoja de datos )

Número de pieza MTN10N65BE3
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes CYStech 
Logotipo CYStech Logotipo

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MTN10N65BE3 Hoja de datos, Descripción, Manual
CYStech Electronics Corp.
Spec. No. : C114E3
Issued Date : 2016.03.21
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTN10N65BE3 BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=6A
650V
10A
0.54Ω
Description
The MTN10N65BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
Applications
Open Framed Power Supply
Adapter
STB
Ordering Information
Device
MTN10N65BE3-0-UB-X
Package
TO-220
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN10N65BE3
CYStek Product Specification

1 page

MTN10N65BE3 pdf
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Spec. No. : C114E3
Issued Date : 2016.03.21
Revised Date :
Page No. : 5/10
10000
1000
Capacitance vs Reverse Voltage
Ciss
Static Drain-Source On-resistance vs Ambient Temperature
3.0
2.5 ID=6A,
VGS=10V
2.0
Coss
100
f=1MHz
Crss
10
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
100μs 10μs
1ms
10ms
100ms
1
DC
0.1 TC=25°C, Tj(max)=150°C
VGS=10V, RθJC=0.68°C/W
Single pulse
0.01
1
10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
12
10
8
6
4
2 VGS=10V, RθJC=0.68°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
1.5
1.0
0.5 RDS(ON)@Tj=25°C:0.54Ω typ.
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Gate Charge Characteristics
10
VDS=130V
8 VDS=325V
6
4 VDS=520V
2
ID=10A
0
0 6 12 18 24 30 36 42 48 54 60
Qg, Total Gate Charge(nC)
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN10N65BE3
CYStek Product Specification

5 Page



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