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PDF MTN10N60DFP Data sheet ( Hoja de datos )
| Número de pieza | MTN10N60DFP | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTN10N60DFP (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C116FP
Issued Date : 2015.12.27
Revised Date : 2016.01.15
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTN10N60DFP BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=6A
600V
10A
0.61Ω
Description
The MTN10N60DFP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Applications
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power
Ordering Information
Device
MTN10N60DFP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN10N60DFP
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C116FP
Issued Date : 2015.12.27
Revised Date : 2016.01.15
Page No. : 5/ 10
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
10000
Static Drain-Source On-resistance vs Ambient Temperature
3.0
Ciss 2.5
1000 2.0
Coss
100
f=1MHz
Crss
10
0 5 10 15 20 25
VDS, Drain-to-Source Voltage(V)
30
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
10μs
100μs
1ms
1 10ms
100ms
0.1 TC=25°C, Tj(max)=150°C
VGS=10V, RθJC=2.5°C/W
Single pulse
DC
0.01
1
10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
12
1.5
1.0
ID=6A,
0.5 VGS=10V
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Gate Charge Characteristics
10
VDS=120V
8
VDS=300V
6
4 VDS=480V
2
0
0
1.4
ID=10A
5 10 15 20 25 30 35 40 45
Qg, Total Gate Charge(nC)
Threshold Voltage vs Junction Tempearture
10 1.2
ID=1mA
81
6
4
2 VGS=10V, RθJC=2.5°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
0.8
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN10N60DFP
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTN10N60DFP.PDF ] | |
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