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PDF MTN10N60CE3 Datasheet ( Hoja de datos )

Número de pieza MTN10N60CE3
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes CYStech 
Logotipo CYStech Logotipo

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MTN10N60CE3 Hoja de datos, Descripción, Manual
CYStech Electronics Corp.
Spec. No. : C085E3
Issued Date : 2016.03.17
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTN10N60CE3 BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=6A
600V
10A
0.54Ω
Description
The MTN10N60CE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
Applications
Power Factor Correction
LCD TV Power
Full and Half Bridge Power
Ordering Information
Device
MTN10N60CE3-0-UB-X
Package
TO-220
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN10N60CE3
CYStek Product Specification

1 page

MTN10N60CE3 pdf
CYStech Electronics Corp.
Spec. No. : C085E3
Issued Date : 2016.03.17
Revised Date :
Page No. : 5/10
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
10000
Ciss
1000
100 Coss
Static Drain-Source On-resistance vs Ambient Temperature
3.0
2.5 ID=6A,
VGS=10V
2.0
1.5
10
f=1MHz
Crss
1
0 5 10 15 20 25
VDS, Drain-to-Source Voltage(V)
30
1.0
0.5
RDS(ON)@Tj=25°C : 0.54Ω typ.
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
100μs
10μs
1ms
10ms
100ms
1
1s
DC
0.1 TC=25°C, Tj(max)=150°C
VGS=10V, RθJC=0.68°C/W
Single pulse
0.01
1
10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
12
Gate Charge Characteristics
10
VDS=120V
8
VDS=300V
6
4 VDS=480V
2
0
0
1.4
ID=10A
5 10 15 20 25 30 35 40
Qg, Total Gate Charge(nC)
Threshold Voltage vs Junction Tempearture
10 1.2
ID=1mA
81
6 0.8
4
2 VGS=10V, RθJC=0.68°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN10N60CE3
CYStek Product Specification

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