(PDF) MTN10N60E3 Datasheet - N-Channel Enhancement Mode Power MOSFET

Número de pieza	MTN10N60E3
Descripción	N-Channel Enhancement Mode Power MOSFET
Fabricantes	CYStech
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No Preview Available ! CYStech Electronics Corp. Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN10N60E3 BVDSS : 650V @Tj=150℃ RDS(ON) : 0.75Ω ID : 10A Description The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • BVDSS=650V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Adaptor • LCD Panel Power • TV Main Power • SMPS Standby Power Symbol MTN10N60E3 Outline TO-220 G：Gate D：Drain S：Source MTN10N60E3 GDS CYStek Product Specification 1 page CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 5/9 MTN10N60E3 CYStek Product Specification 5 Page

Páginas	Total 9 Páginas
PDF Descargar	[ Datasheet MTN10N60E3.PDF ]

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PDF MTN10N60E3 Data sheet ( Hoja de datos )