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Número de pieza | QPA2628D | |
Descripción | GaAs Low Noise Amplifier | |
Fabricantes | TriQuint Semiconductor | |
Logotipo | ||
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No Preview Available ! Applications
Satellite Communications
Point-to-Point Communications
QPA2628D
25 – 31 GHz GaAs Low Noise Amplifier
Product Features
Frequency Range: 25–31 GHz
Noise Figure: 1.7 dB (typical)
Small Signal Gain: 22 dB (typical)
P1dB: 19 dBm (typical)
IM3: −53 dBc (Pout=0 dBm/tone) (typical)
Bias: VD = 3.5 V, IDQ = 90 mA, VG = −0.46 V (typical)
Die Dimensions: 2.40 x 1.00 x 0.10 mm
Functional Block Diagram
RF IN
1
8
2
7
3
6
RF OUT
5
4
General Description
Qorvo’s QPA2628D is a high-performance, low noise
amplifier fabricated on Qorvo’s production 90nm pHEMT
(QPHT09) process. Covering 25–31 GHz, the
QPA2628D provides 22 dB small signal gain and P1dB
of 19 dBm, while supporting a noise figure of 1.7 dB and
IM3 levels of −53 dBc (at Pout=0 dBm/tone).
The QPA2628D is in die form, 2.40 x 1.00 x 0.10 mm,
with both RF ports matched to 50 ohms and with
integrated DC blocking caps on both I/O ports for simple
system integration.
The QPA2628D high performance makes it ideal for
satellite and point to point communication systems.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2
3
4
5
6
7
8
Label
RF Input
VG1
VG2
VG3
RF Output
VD3
VD2
VD1
Ordering Information
Part
QPA2628D
ECCN Description
3A001.b.2.d
25 – 31 GHz Low
Noise Amplifier
Datasheet: Rev - 03-14-16
© 2016 TriQuint
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
1 page QPA2628D
25 – 31 GHz GaAs Low Noise Amplifier
Typical Performance: Small Signal
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 3.5 V, IDQ = 90 mA. Data de-embedded to MMIC bondwires.
30 Gain vs. Frequency vs. IDQ
28 VD = 3.5 V
26
24
22
20
18
16
14
12
70 mA 90 mA 110 mA
10
24 25 26 27 28 29 30 31 32
Frequency (GHz)
0 Input Return Loss vs. Freq. vs. IDQ
VD = 3.5 V
-5
-10
-15
-20
-25
70 mA 90 mA 110 mA
-30
24 25 26 27 28 29 30 31
Frequency (GHz)
32
Output Return Loss vs. Freq. vs. IDQ
0
VD = 3.5 V
-5
-10
-15
-20
-25
70 mA 90 mA 110 mA
-30
24 25 26 27 28 29 30 31
Frequency (GHz)
32
Datasheet: Rev - 03-14-16
© 2016 TriQuint
- 5 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
5 Page QPA2628D
25 – 31 GHz GaAs Low Noise Amplifier
Evaluation Board and Mounting Detail
GND
VD
C18
C15
C12
C3
C6
C9
GND
Reference Plane
Mounting pad detail
GND
GND
VG
RF Layer is 0.008” thick Rogers Corp. RO4003C (εr = 3.35). Metal layers are 0.5 oz. copper. The microstrip line at
the connector interface is optimized for the Southwest Microwave end launch connector 1492-04A-5.
All data de-embedded to the MMIC bondwires (shown).
Note: Multiple vias should be employed under die to minimize inductance and thermal resistance.
Ref. Des. Component
Value
C3, C12
Surface Mount Cap. CAP 0.01UF +/-10% 50V 0402 X7R ROHS
Manuf. Part Number
Various
C6, C15
Surface Mount Cap. CAP 1.0UF +/-10% 16V 0603 X7R ROHS
Various
C9, C18
Surface Mount Cap. CAP CER 10UF 10V X7R 10% 0805 TDK ROHS Various
Datasheet: Rev - 03-14-16
© 2016 TriQuint
- 11 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet QPA2628D.PDF ] |
Número de pieza | Descripción | Fabricantes |
QPA2628 | GaAs Low Noise Amplifier | TriQuint Semiconductor |
QPA2628D | GaAs Low Noise Amplifier | TriQuint Semiconductor |
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