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PDF 2SB897 Data sheet ( Hoja de datos )
| Número de pieza | 2SB897 | |
| Descripción | Silicon PNP Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB897
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= -10A
·Low Collector Saturation Voltage-
: VCE(sat) = -1.5V(Max.) @IC= 10A
·Complement to Type 2SD1210
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current-Continuous
ICM Collector Current-Peak
-100
-8
-10
-15
V
V
A
A
IB Base Current- Continuous
Collector Power Dissipation
PC @TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
-0.5 A
80 W
150 ℃
-55~150
℃
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB897.PDF ] | |
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