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PDF TGAN60N60FD Data sheet ( Hoja de datos )
| Número de pieza | TGAN60N60FD | |
| Descripción | Field Stop Trench IGBT | |
| Fabricantes | TRinno | |
| Logotipo |  |
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Features:
• 600V Field Stop Trench Technology
• High Speed Switching
• Low Conduction Loss
• Positive Temperature Coefficient
• Easy Parallel Operation
• RoHS Compliant
• JEDEC Qualification
Applications :
Induction Heating, Soft Switching Application, UPS, Welder, Inverter
TGAN60N60FD
Field Stop Trench IGBT
E
GC
Device
TGAN60N60FD
Package
TO-3PN
Marking
TGAN60N60FD
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Power Dissipation
Operating Junction Temperature
TC = 25 ℃
TC = 100 ℃
TC = 100 ℃
TC = 25 ℃
TC = 100 ℃
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Symbol
VCES
VGES
Ic
ICM
IF
PD
TJ
TSTG
TL
Notes :
(1) Repetitive rating : Pulse width limited by maximum junction temperature
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT)
RθJC (DIODE)
RθJA
Value
600
±20
120
60
180
30
347
139
-55 ~ 150
-55 ~ 150
300
Value
0.36
1.12
40
Remark
RoHS
Unit
V
V
A
A
A
A
W
W
℃
℃
℃
Unit
℃/W
℃/W
℃/W
Mar. 2013
www.trinnotech.com
1/8
1 page  
IGBT Characteristics
Fig. 7 Turn-on time vs. gate resistance
1000
T = 25 oC
C
T = 125 oC
C
100
t
r
t
d(on)
TGAN60N60FD
Field Stop Trench IGBT
Fig. 8 Turn-off time vs. gate resistance
1000
T = 25 oC
C
T = 125 oC
C
t
d(off)
t
f
100
Common Emitter
VCE = 400V, VGE = 15V, IC= 60A
10
0 10 20 30 40 50 60
Gate Resistance, R [Ω]
G
Fig. 9 Switching loss vs. gate resistance
6000
4000
T = 25 oC
C
T = 125 oC
C
E
ON
E
OFF
2000
Common Emitter
VCE = 400V, VGE = 15V, IC= 60A
10
0 10 20 30 40 50 60
Gate Resistance, R [Ω]
G
Fig. 10 Turn-on time vs. collector current
T = 25 oC
C
T = 125 oC
C
t
r
100
t
d(on)
Common Emitter
VCE = 400V, VGE = 15V, IC= 60A
0 10 20 30 40 50 60
Gate Resistance, R [Ω]
G
Fig. 11 Turn-off time vs. collector current
T = 25 oC
C
T = 125 oC
C
100
t
f
t
d(off)
10
20
Common Emitter
VCE = 400V, VGE = 15V, RG= 10Ω
40 60 80 100
Collector Current, I [A]
C
120
Fig. 12 Switching loss vs. collector current
10000
T = 25 oC
C
T = 125 oC
C
E
ON
E
OFF
1000
10
20
Mar. 2013
Common Emitter
VCE = 400V, VGE = 15V, RG= 10Ω
40 60 80 100
Collector Current, I [A]
C
120
100
20
www.trinnotech.com
Common Emitter
VCE = 400V, VGE = 15V, RG= 10Ω
40 60 80 100
Collector Current, I [A]
C
120
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TGAN60N60FD.PDF ] | |
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