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Número de pieza | TGAN40N110FD | |
Descripción | Field Stop Trench IGBT | |
Fabricantes | TRinno | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TGAN40N110FD (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Features
• 1100V Field Stop Trench Technology
• High Speed Switching
• Low Conduction Loss
• Positive Temperature Coefficient
• Easy Parallel Operation
• RoHS Compliant
• JEDEC Qualification
Applications
Induction Heating, Soft switching application
TGAN40N110FD
Field Stop Trench IGBT
E
GC
Device
TGAN40N110FD
Package
TO-3PN
Marking
TGAN40N110FD
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Diode Continuous Forward Current
Power Dissipation
TC = 100 ℃
TC = 25 ℃
TC = 100 ℃
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Symbol
VCES
VGES
IC
ICM
IF
PD
TJ
TSTG
TL
Value
1100
±20
80
40
120
40
338
135
-55 ~ 150
-55 ~ 150
300
Notes :
(1) Repetitive rating : Pulse width limited by maximum junction temperature
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT)
RθJC (DIODE)
RθJA
Value
0.37
1.59
40
June 2015. Rev 0.0
www.trinnotech.com
Remark
RoHS
Unit
V
V
A
A
A
A
W
W
℃
℃
℃
Unit
℃/W
℃/W
℃/W
1/8
1 page IGBT Characteristics
Fig. 7 Turn-on time vs. gate resistor
T = 25 oC
C
T = 150 oC
C
100
t
r
t
d(on)
10
0 10
Common Emitter
VCC = 600V, VGE = 15V, IC= 40A
20 30 40 50 60 70
Gate Resistor, R [Ω]
G
Fig. 9 Switching loss vs. gate resistor
10000
T = 25 oC
C
T = 150 oC
C
E
ON
E
OFF
TGAN40N110FD
Field Stop Trench IGBT
Fig. 8 Turn-off time vs. gate resistor
1000
T = 25 oC
C
T = 150 oC
C
t
d(off)
100
t
f
Common Emitter
VCC = 600V, VGE = 15V, IC= 40A
10
0 10 20 30 40 50 60 70
Gate Resistor, R [Ω]
G
Fig. 10 Turn-on time vs. collector current
T = 25 oC
C
T = 150 oC
C
100
t
r
t
d(on)
1000
0
Common Emitter
VCC = 600V, VGE = 15V, IC= 40A
10 20 30 40 50 60 70
Gate Resistor, R [Ω]
G
Fig. 11 Turn-off time vs. collector current
T = 25 oC
C
T = 150 oC
C
t
d(off)
100
t
f
Common Emitter
VCC = 600V, VGE = 15V, RG= 10Ω
10
0 10 20 30 40 50 60 70 80 90
Collector Current, I [A]
C
Fig. 12 Switching loss vs. collector current
10000
T = 25 oC
C
T = 150 oC
C
E
ON
E
OFF
1000
Common Emitter
VCC = 600V, VGE = 15V, RG= 10Ω
10
0 10 20 30 40 50 60 70 80 90
Collector Current, I [A]
C
Common Emitter
100 VCC = 600V, VGE = 15V, RG= 10Ω
0 10 20 30 40 50 60 70 80 90
Collector Current, I [A]
C
June 2015. Rev 0.0
www.trinnotech.com
5/8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet TGAN40N110FD.PDF ] |
Número de pieza | Descripción | Fabricantes |
TGAN40N110FD | Field Stop Trench IGBT | TRinno |
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