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PDF TGAN25N120ND Data sheet ( Hoja de datos )
| Número de pieza | TGAN25N120ND | |
| Descripción | NPT Trench IGBT | |
| Fabricantes | TRinno | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TGAN25N120ND (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Features:
• 1200V NPT Trench Technology
• High Speed Switching
• Low Conduction Loss
• Positive Temperature Coefficient
• Easy parallel Operation
• RoHS compliant
• JEDEC Qualification
Applications :
Induction Heating, Soft switching application
TGAN25N120ND
NPT Trench IGBT
E
GC
Device
TGAN25N120ND
Package
TO-3PN
Marking
TGAN25N120ND
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Diode Continuous Forward Current
Diode Maximum Forward Current
TC = 100 ℃
Power Dissipation
TC = 25 ℃
TC = 100 ℃
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Symbol
VCES
VGES
Ic
ICM
IF
IFM
PD
TJ
TSTG
TL
Notes :
(1) Repetitive rating : Pulse width limited by maximum junction temperature
Value
1200
±20
50
25
75
25
75
312
125
-55 ~ 150
-55 ~ 150
300
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT)
RθJC (DIODE)
RθJA
Value
0.4
2.1
40
Oct. 2013 : Rev.1.1
www.trinnotech.com
Remark
RoHS
Unit
V
V
A
A
A
A
A
W
W
℃
℃
℃
Unit
℃/W
℃/W
℃/W
1/8
1 page  
IGBT Characteristics
Fig. 7 Turn-on time vs. gate resistor
TC = 25oC
TC = 125oC
100
t
r
t
d(on)
Common Emitter
VCC = 600V, VGE = 15V, IC = 25A
10
0 10 20 30 40 50 60 70
Gate Resistor, R [Ω]
G
Fig. 9 Switching loss vs. gate resistor
10000
TC = 25oC
TC = 125oC
E
ON
1000
E
OFF
100
0
Common Emitter
VCC = 600V, VGE = 15V, IC = 25A
10 20 30 40 50 60 70
Gate Resistor, R [Ω]
G
Fig. 11 Turn-off time vs. collector current
1000
TC = 25oC
TC = 125oC
100
t
d(off)
t
f
TGAN25N120ND
NPT Trench IGBT
Fig. 8 Turn-off time vs. gate resistor
1000
TC = 25oC
TC = 125oC
t
d(off)
t
f
100
Common Emitter
VCC = 600V, VGE = 15V, IC = 25A
10
0 10 20 30 40 50 60 70
Gate Resistor, R [Ω]
G
Fig. 10 Turn-on time vs. collector current
1000
TC = 25oC
TC = 125oC
100 t
r
10
10
t
d(on)
Common Emitter
VCC = 600V, VGE = 15V, RG = 10Ω
15 20 25
Collector Current, I [A]
C
30
Fig. 12 Switching loss vs. collector current
10000
TC = 25oC
TC = 125oC
E
ON
E
OFF
1000
10
10
Common Emitter
VCC = 600V, VGE = 15V, RG = 10Ω
15 20 25
Collector Current, I [A]
C
30
100
10
Oct. 2013 : Rev.1.1
www.trinnotech.com
Common Emitter
VCC = 600V, VGE = 15V, RG = 10Ω
15 20 25
Collector Current, I [A]
C
30
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TGAN25N120ND.PDF ] | |
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