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PDF TGAN25N120FDR Data sheet ( Hoja de datos )
| Número de pieza | TGAN25N120FDR | |
| Descripción | Field Stop Trench IGBT | |
| Fabricantes | TRinno | |
| Logotipo |  |
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Features
• 1200V Field Stop Trench Technology
• High Speed Switching
• Low Conduction Loss
• Positive Temperature Coefficient
• Easy Parallel Operation
• Short Circuit Withstanding Time 5μs
• RoHS Compliant
• JEDEC Qualification
Applications
UPS, Welder, Inverter, Solar
TGAN25N120FDR
Field Stop Trench IGBT
E
GC
Device
TGAN25N120FDR
Package
TO-3PN
Marking
TGAN25N120FDR
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Diode Continuous Forward Current
Power Dissipation
TC = 100 ℃
TC = 25 ℃
TC = 100 ℃
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Symbol
VCES
VGES
IC
ICM
IF
PD
TJ
TSTG
TL
Value
1200
±20
50
25
75
25
338
135
-55 ~ 150
-55 ~ 150
300
Notes :
(1) Repetitive rating : Pulse width limited by maximum junction temperature
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT)
RθJC (DIODE)
RθJA
Value
0.37
2.1
40
October 2015. Rev 0.0
www.trinnotech.com
Remark
RoHS
Unit
V
V
A
A
A
A
W
W
℃
℃
℃
Unit
℃/W
℃/W
℃/W
1/8
1 page  
IGBT Characteristics
Fig. 7 Turn-on time vs. gate resistor
T = 25 oC
C
T = 150 oC
C
100
t
d(on)
t
r
TGAN25N120FDR
Field Stop Trench IGBT
Fig. 8 Turn-off time vs. gate resistor
1000
T = 25 oC
C
T = 150 oC
C
t
d(off)
t
f
100
Common Emitter
VCC = 600V, VGE = 15V, IC= 25A
10
0 10 20 30 40 50 60 70
Gate Resistor, R [Ω]
G
Fig. 9 Switching loss vs. gate resistor
10000
T = 25 oC
C
T = 150 oC
C
E
ON
Common Emitter
VCC = 600V, VGE = 15V, IC= 25A
10
0 10 20 30 40 50 60 70
Gate Resistor, R [Ω]
G
Fig. 10 Turn-on time vs. collector current
T = 25 oC
C
T = 150 oC
C
100
1000
E
OFF
0 10
Common Emitter
VCC = 600V, VGE = 15V, IC= 25A
20 30 40 50 60 70
Gate Resistor, R [Ω]
G
Fig. 11 Turn-off time vs. collector current
T = 25 oC
C
T = 150 oC
C
t
d(off)
100
t
f
t
d(on)
t
r
Common Emitter
VCC = 600V, VGE = 15V, RG= 10Ω
10
0 10 20 30 40 50 60
Collector Current, I [A]
C
Fig. 12 Switching loss vs. collector current
10000
T = 25 oC
C
T = 150 oC
C
E
ON
E
OFF
1000
Common Emitter
VCC = 600V, VGE = 15V, RG= 10Ω
10
0 10 20 30 40 50 60
Collector Current, I [A]
C
100
0
October 2015. Rev 0.0
www.trinnotech.com
10
Common Emitter
VCC = 600V, VGE = 15V, RG= 10Ω
20 30 40
Collector Current, I [A]
C
50
60
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TGAN25N120FDR.PDF ] | |
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