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PDF TMU5N50G Data sheet ( Hoja de datos )
| Número de pieza | TMU5N50G | |
| Descripción | N-channel MOSFET | |
| Fabricantes | TRinno | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TMU5N50G (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
Fast reverse recovery
D-PAK
TMD5N50/TMU5N50
TMD5N50G/TMU5N50G
VDSS = 550 V @Tjmax
ID = 4.5A
RDS(ON) = 1.65 W(max) @ VGS= 10 V
I-PAK
D
Device
TMD5N50/TMU5N50
TMD5N50G/TMU5N50G
Package
D-PAK/I-PAK
D-PAK/I-PAK
G
S
Marking
TMD5N50/TMU5N50
TMD5N50G/TMU5N50G
Remark
RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
August 2010 : Rev0
www.trinnotech.com
TMD5N50(G)/TMU5N50(G)
500
±30
4.5
2.86
18
240
4.5
9.25
92.5
0.74
4.5
-55~150
300
TMD5N50(G)/TMU5N50(G)
1.35
62.5
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Unit
℃/W
℃/W
1/2
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TMU5N50G.PDF ] | |
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