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PDF DG6N60 Data sheet ( Hoja de datos )
| Número de pieza | DG6N60 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | JiangSu Dongchen Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de DG6N60 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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江苏东晨电子科技有限公司
JiangSu Dongchen Electronics Technology Co.,Ltd
DG6N60
N 沟道增强型场效应晶体管
N-CHANNEL ENHANCEMENT MODE MOSFET
版本号
201603-A
产品概述 General Description
DG6N60是N沟道增强型场效应晶体管，应用了东晨电子的相关专利技术，采用自对准平面工艺及先进的
终端耐压技术，降低了导通损耗，提高了开关特性，增强了雪崩耐量。该产品能应用于多种功率开关电
路，使得电源能效更高，系统更加小型化。
DG6N60 is an N-channel enhancement mode MOSFET, which is produced using Dongchen Electronics’s
proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The transistor can be used in various power switching
circuit for higher efficiency and system miniaturization.
主要参数 MAIN CHARACTERISTICS
VDSS
ID
RDS(ON)
Crss
600
6.0
1.5
11
V
A
Ω
pF
符号 Symbol
封装 Package
86-510-87136806
1 /13
http://www.jsdgme.com
1 page  
特征曲线
江苏东晨电子科技有限公司
JiangSu Dongchen Electronics Technology Co.,Ltd
ELECTRICAL CHARACTERISTICS (curves)
图1. 输出特性曲线
Fig. 1 On-State Characteristics
图2. 传输特性曲线
Fig. 2 Transfer Characteristics
图3. 击穿电压随温度变化曲线
图4. 导通电阻随温度变化曲线
Fig. 3 Breakdown Voltage Variation vs Temperature Fig. 4 On-Resistance Variation vs Temperature
图5. 电容特性曲线
Fig. 5 Capacitance Characteristics
86-510-87136806
5 /13
图6. 栅电荷特性曲线
Fig. 6 Gate Charge Characteristics
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5 Page 
江苏东晨电子科技有限公司
JiangSu Dongchen Electronics Technology Co.,Ltd
TO-262
DIM
A
A1
C
C2
D
D1
E
86-510-87136806
MILLIMETERS
4.70±0.08
2.75±0.05
0.38±0.03
1.27±0.03
8.40±0.05
6.55±0.08
10.15±0.08
DIM
E1
e
L
L1
L2
b
b2
11 /13
MILLIMETERS
7.85±0.08
2.54±0.05
14.00±0.08
1.275±0.05
3.75±0.08
0.80±0.05
1.22±0.05
http://www.jsdgme.com
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet DG6N60.PDF ] | |
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