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PDF TMP2N60AZ Data sheet ( Hoja de datos )

Número de pieza TMP2N60AZ
Descripción N-channel MOSFET
Fabricantes TRinno 
Logotipo TRinno Logotipo



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No Preview Available ! TMP2N60AZ Hoja de datos, Descripción, Manual

Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
Improved ESD performance
TMP2N60AZ(G)/TMPF2N60AZ(G)
BVDSS
600V
N-channel MOSFET
ID RDS(on)
2.0A
< 4.0W
Device
TMP2N60AZ / TMPF2N60AZ
TMP2N60AZG / TMPF2N60AZG
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP2N60AZ / TMPF2N60AZ
TMP2N60AZG / TMPF2N60AZG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP2N60AZ(G) TMPF2N60AZ(G)
600
±30
2.0 2.0 *
1.43 1.43 *
8 8*
66
2.0
5.21
52.1 17.3
0.416
0.138
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP2N60AZ(G)
2.4
62.5
October 2012 : Rev0
www.trinnotech.com
TMPF2N60AZ(G)
7.2
62.5
Unit
/W
/W
1/7

1 page




TMP2N60AZ pdf
TMP2N60AZ(G)/TMPF2N60AZ(G)
TMP2N60AZ(G)
Duty=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
10-2
single pulse
PDM
t
T
Duty = t/T
Z (t) = 2.4 /W Max.
thJC
10-5
10-4
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
101
Duty=0.5
0.2
100 0.1
0.05
0.02
10-1 0.01
10-2
TMPF2N60AZ(G)
single pulse
PDM
t
T
Duty = t/T
Z (t) = 7.2 /W Max.
thJC
10-5
10-4
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
October 2012 : Rev0
www.trinnotech.com
5/7

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