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PDF TMP10N60G Data sheet ( Hoja de datos )

Número de pieza TMP10N60G
Descripción Power MOSFET ( Transistor )
Fabricantes TRinno 
Logotipo TRinno Logotipo



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No Preview Available ! TMP10N60G Hoja de datos, Descripción, Manual

Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP10N60/TMPF10N60
TMP10N60G/TMPF10N60G
VDSS = 660 V @Tjmax
ID = 10A
RDS(on) = 0.75 W(max) @ VGS= 10 V
D
G
S
Device
TMP10N60 / TMPF10N60
TMP10N60G / TMPF10N60G
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP10N60 / TMPF10N60
TMP10N60G / TMPF10N60G
Remark
RoHS
Halogen Free
Symbol
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP10N60(G) TMPF10N60(G)
600
±30
10 10*
6.5 6.5*
40 40*
758
10
19.8
198 52
1.58 0.41
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP10N60(G)
0.63
62.5
May 2010 : Rev1
www.trinnotech.com
TMPF10N60(G)
2.4
62.5
Unit
/W
/W
1/5

1 page




TMP10N60G pdf
TMP10N60/TMPF10N60
TMP10N60G/TMPF10N60G
100
Duty=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
TMP10N60(G)
single pulse
PDM
t
T
Duty = t/T
Z (t) = 0.63 /W Max.
thJC
10-5
10-4
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
TMPF10N60(G)
Duty=0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
10-2
10-5
10-4
single pulse
PDM
t
T
Duty = t/T
Z (t) = 2.4 /W Max.
thJC
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
May 2010 : Rev1
www.trinnotech.com
5/5

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