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PDF 2N4341 Data sheet ( Hoja de datos )
| Número de pieza | 2N4341 | |
| Descripción | N-Channel JFETs | |
| Fabricantes | Vishay | |
| Logotipo |  |
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2N4338/4339/4340/4341
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
2N4338
2N4339
2N4340
2N4341
VGS(off) (V)
–0.3 to –1
–0.6 to –1.8
–1 to –3
–2 to –6
V(BR)GSS Min (V) gfs Min (mS)
–50 0.6
–50 0.8
–50 1.3
–50 2
IDSS Max (mA)
0.6
1.5
3.6
9
FEATURES
D Low Cutoff Voltage: 2N4338 <1 V
D High Input Impedance
D Very Low Noise
D High Gain: AV = 80 @ 20 mA
BENEFITS
D Full Performance from Low-Voltage
Power Supply: Down to 1 V
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality Low-Level Signal
Amplification
APPLICATIONS
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Infrared Detector Amplifiers
D Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N4338/4339/4340/4341 n-channel JFETs are designed
for sensitive amplifier stages at low- to mid-frequencies. Low
cut-off voltages accommodate low-level power supplies and
low leakage for improved system accuracy.
The TO-206AA (TO-18) package is hermetically sealed and
suitable for military processing (see Military Information). For
similar products in TO-226AA (TO-92) and TO-236 (SOT-23)
packages, see the J/SST201 series data sheet.
TO-206AA
(TO-18)
S
1
2
D
3
Top View
G and Case
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 175_C
For applications information see AN102 and AN106.
Document Number: 70240
S-04028—Rev. E, 04-Jun-01
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Notes
a. Derate 2 mW/_C above 25_C
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1 page  
2N4338/4339/4340/4341
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
500
VGS(off) = –0.7 V
VDS = 10 V
Transfer Characteristics
2
VGS(off) = –1.5 V
VDS = 10 V
400
300 TA = –55_C
25_C
200
1.6
TA = –55_C
1.2 25_C
0.8
125_C
100
0.4 125_C
0
0
–0.1
–0.2
–0.3
–0.4
VGS – Gate-Source Voltage (V)
–0.5
Transconductance vs. Gate-Source Voltage
1.5
VGS(off) = –0.7 V
VDS = 10 V
f = 1 kHz
1.2
TA = –55_C
25_C
0.9
0.6
125_C
0.3
0
0
–0.1
–0.2
–0.3
–0.4
VGS – Gate-Source Voltage (V)
–0.5
Circuit Voltage Gain vs. Drain Current
200
AV + 1
gfs RL
) RLgos
160 Assume VDD = 15 V, VDS = 5 V
120
RL
+
10 V
ID
0
0
–0.4
–0.8 –1.2 –1.6
–2
VGS – Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
4
VGS(off) = –1.5 V
VDS = 10 V
f = 1 kHz
3.2
2.4
TA = –55_C
25_C
1.6
0.8
0
0
125_C
–0.4
–0.8
–1.2
–1.6
VGS – Gate-Source Voltage (V)
–2
2000
1600
1200
On-Resistance vs. Drain Current
TA = 25_C
VGS(off) = –0.7 V
80
VGS(off) = –0.7 V
–1.5 V
40
0
0.01
0.1
ID – Drain Current (mA)
Document Number: 70240
S-04028—Rev. E, 04-Jun-01
1
800
400
0
0.01
–1.5 V
0.1
ID – Drain Current (mA)
1
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N4341.PDF ] | |
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