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PDF DPG10IM300UC Data sheet ( Hoja de datos )

Número de pieza DPG10IM300UC
Descripción High Performance Fast Recovery Diode
Fabricantes IXYS 
Logotipo IXYS Logotipo



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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPG10IM300UC
Marking on Product: PAOGUI
1
3
2/4
DPG10IM300UC
VRRM
I FAV
t rr
=
=
=
300 V
10 A
35 ns
Backside: cathode
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Package: TO-252 (DPak)
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a

1 page




DPG10IM300UC pdf
DPG10IM300UC
Fast Diode
30
25
20
IF 15
[A] 10
TVJ = 25°C
125°C
150°C
0.3
T = 125°C
VJ
VR = 200 V
0.2
Qrr
[μC]
0.1
20 A
10 A
5A
12
10
8
IRR
6
[A]
4
TVJ = 125°C
VR = 200 V
20 A
10 A
5A
52
0
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF versus VF
2.0
0.0
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
0
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 3 Typ. reverse recov. current
IRR versus -diF /dt
1.4 80
TVJ = 125°C
1.2 VR = 200 V
1.0
0.8
Kf
0.6
IRR
0.4
0.2 Qrr
60
trr
[ns]
40
IF = 20 A
10 A
5A
0.0
0
40 80 120
TVJ [°C]
160
Fig. 4 Typ. dynamic parameters
Qrr, IRR versus TVJ
20
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
12 600
10 500
8
VFR
6
[V]
4
TVJ = 125°C
IF = 10 A
VR = 200 V
400
3t0fr0
[ns]
200
2 VFR
100
tfr
00
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 6 Typ. forward recov. voltage
VFR and tfr versus diF /dt
10
TVJ = 125°C
VR = 200 V
8
3
6
Erec
[μJ] 4
2
IF = 5 A
10 A
20 A
0
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
2
ZthJH
[K/W]
1
0
0.001
0.01
0.1
t [s]
R [K/W]
thi
0.3866
0.7062
0.8127
0.3945
1
Fig. 8 Transient thermal resistance junction to case
t [s]
i
0.0004
0.0025
0.022
0.13
10
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a

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