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PDF DPG60C200HB Data sheet ( Hoja de datos )
| Número de pieza | DPG60C200HB | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG60C200HB
1 23
DPG60C200HB
VRRM
I FAV
t rr
= 200 V
= 2x 30 A
= 35 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126b
1 page  
DPG60C200HB
Fast Diode
80
70
60
IF 50
40
[A]
30
TVJ = 150°C
20
10
25°C
0.4 IF = 60 A
30 A
15 A
0.3
Qrr
0.2
[μC]
0.1
TVJ = 125°C
VR = 130 V
16
14
12
IRM 10
8
[A] 6
4
2
IF = 60 A
30 A
15 A
TVJ = 125°C
VR = 130 V
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF versus VF
2.0
0
Fig. 2
200 400 600
-diF /dt [A/μs]
Typ. reverse recov. charge
Qrr versus -diF /dt
0
Fig. 3
200 400 600
-diF /dt [A/μs]
Typ. reverse recov. current
IRM versus -diF /dt
1.4 70 600 12
1.2
60
TVJ = 125°C
VR = 130 V
tfr
500
VFR
10
1.0
Kf 0.8
0.6
IRM
0.4
0.2 Qrr
0
40
80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
trr 50
[ns] 40
IF = 60 A
30 A
15 A
30
20
0 200 400 600
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov, time
trr versus -diF /dt
400
tfr
300
[ns]
200
8
VFR
6
[V]
4
100
0
0
TVJ = 125°C
VR = 130 V
IF = 30 A
200 400
2
0
600
-diF /dt [A/μs]
Fig. 6 Typ. forward recov. voltage
VFR and tfr versus diF /dt
16
14
TVJ = 125°C
VR = 130 V
1.2
1.0
12
10
Erec 8
IF = 15 A
30 A
60 A
[μJ] 6
4
2
0 200 400 600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0.8
ZthJC
0.6
[K/W]
0.4
0.2
0.0
1
R [K/W]
thi
0.1311
0.1377
0.3468
0.2394
0.095
10 100 1000
t [ms]
Fig. 8 Transient thermal impedance junction to case
t [s]
i
0.0018
0.002
0.012
0.07
0.345
100 00
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126b
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DPG60C200HB.PDF ] | |
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