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PDF DHH55-36N1F Data sheet ( Hoja de datos )
| Número de pieza | DHH55-36N1F | |
| Descripción | Sonic Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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DHH55-36N1F
Sonic Fast Recovery Diode
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Phase leg
Part number
DHH55-36N1F
1
3
5
VRRM =
IFAV =
t rr =
1800 V
60 A
230 ns
Backside: Isolated
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package:
● Housing: i4-Pac
●rDCB isolated backside
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
Ratings
Symbol
VRRM
IR
VF
IFAV
VF0
rF
R thJC
T VJ
Ptot
I FSM
I RM
t rr
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
VR = 1800 V
VR = 1800 V
IF = 60 A
IF = 120 A
IF = 60 A
IF = 120 A
rectangular
d = 0.5
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
t = 10 ms (50 Hz), sine
IF = 60 A; VR = 1200 V
-diF/dt = 800 A/µs
CJ junction capacitance
VR = 1200 V; f = 1 MHz
TVJ = 25 °C
TVJ = 25°C
TVJ = 125 °C
TVJ = 25°C
TVJ = 125°C
TC = 50°C
TVJ = 150 °C
TC = 25°C
TVJ = 45°C
TVJ = 25 °C
TVJ = 100 °C
TVJ = 25 °C
TVJ = 100 °C
TVJ = 25°C
min. typ. max.
1800
200
2
2.04
2.57
2.03
2.73
60
1.28
12
0.60
-55 150
210
700
60
70
230
350
28
Unit
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
°C
W
A
A
A
ns
ns
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20110908c
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet DHH55-36N1F.PDF ] | |
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