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PDF DPF240X400NA Data sheet ( Hoja de datos )

Número de pieza DPF240X400NA
Descripción High Performance Fast Recovery Diode
Fabricantes IXYS 
Logotipo IXYS Logotipo



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HiPerFRED
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Parallel legs
Part number
DPF240X400NA
21
34
DPF240X400NA
VRRM
I FAV
t rr
= 400 V
= 2x 120 A
= 30 ns
Backside: isolated
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Package: SOT-227B (minibloc)
Isolation Voltage: 3000 V~
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Base plate: Copper
internally DCB isolated
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160217b

1 page




DPF240X400NA pdf
DPF240X400NA
Fast Diode
3.0 45
200
150
IF
100
[A]
TVJ = 125°C
150°C
50
25°C
2.5
2.0
Qrr
1.5
[µC]
1.0
IF = 240 A
120 A
30 A
0.5
TVJ = 125°C
VR = 240 V
40
35
30
IRM 25
20
[A]
15
10
5
IF = 240 A
120 A
30 A
TVJ = 125°C
VR = 240 V
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF vs. VF
2.0
0.0
0
Fig. 2
200 400 600
-diF /dt [A/µs]
Typ. reverse recovery charge
Qrr vs. -diF /dt
0
0
Fig. 3
200 400 600
-diF /dt [A/µs]
Typ. reverse recovery current
IRM vs. -diF /dt
1.4
1.2
1.0
0.8
Kf
0.6
IRM
220
200
180
trr
160
[ns]
140
TVJ = 125°C
VR = 240 V
2800
2400
tfr
2000
[ns]
1600
tfr TVJ = 125°C
VR = 240 V
IF = 120 A
28
VFR
24
VFR
20
[V]
16
0.4
0.2 Qrr
0.0
0
40 80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRM vs. TVJ
120
IF = 240 A
100 120 A
30 A
80
0 200 400 600
-diF /dt [A/µs]
Fig. 5 Typ. reverse recovery time
trr vs. -diF /dt
1200
12
800
0
200 400 600
-diF /dt [A/µs]
8
Fig. 6 Typ. forward recovery voltage
VFR & tfr vs. diF /dt
140 0.6
120 0.5
100
80
Erec
60
[µJ]
40
IF = 240 A
120 A
30 A
0.4
ZthJC
0.3
[K/W]
0.2
20 TVJ = 125°C
VR = 240 V
0
0 200 400 600
-diF /dt [A/µs]
Fig. 7 Typ. recovery energy
Erec vs. -diF /dt
0.1
0.0
100
101 102 103
t [ms]
Fig. 8 Transient thermal impedance junction to case
104
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160217b

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