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PDF DPG60I400HA Data sheet ( Hoja de datos )
| Número de pieza | DPG60I400HA | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPG60I400HA
31
DPG60I400HA
VRRM
I FAV
t rr
=
=
=
400 V
60 A
45 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
1 page  
DPG60I400HA
Fast Diode
120
100
80
IF
60
[A]
40
20
TVJ = 150°C
25°C
1.0
TVJ = 125°C
VR = 270 V
0.8
Qrr
0.6
[μC]
0.4
120 A
60 A
30 A
22
20
18
16
IRM 14
12
[A]
10
8
6
IF = 120 A
60 A
30 A
TVJ = 125°C
VR = 270 V
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF versus VF
2.0
0.2
0
200 400 600
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
4
0 200 400 600
-diF /dt [A/μs]
Fig. 3 Typ. reverse recov. current
IRM versus -diF /dt
1.4
1.2
1.0
Kf 0.8
0.6
IRM
0.4
0.2
0
Qrr
40
80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
110
1200
12
TVJ = 125°C
VR = 270 V
1100
tfr
TVJ = 125°C
VR = 270 V
11
VFR
100
1000
IF = 60 A
10
900 9
90
trr
[ns] 80
tfr 800
700
[ns] 600
8 VFR
7
6 [V]
70 120 A
60 A
30 A
60
0 200 400 600
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
500 5
400 4
300 3
200
0
200 400
-diF /dt [A/μs]
2
600
Fig. 6 Typ. forward recovery voltage
VFR & time tfr versus diF /dt
40
TVJ = 125°C
VR = 270 V
30
Erec
20
[μJ]
120 A
60 A
30 A
1.0
ZthJC
[K/W]
10
0
0 200 400 600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0.1
100 101 102 103
t [ms]
Fig. 8 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
104
20131101a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DPG60I400HA.PDF ] | |
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