DataSheet.es    


PDF DPG80C400HB Data sheet ( Hoja de datos )

Número de pieza DPG80C400HB
Descripción High Performance Fast Recovery Diode
Fabricantes IXYS 
Logotipo IXYS Logotipo



Hay una vista previa y un enlace de descarga de DPG80C400HB (archivo pdf) en la parte inferior de esta página.


Total 5 Páginas

No Preview Available ! DPG80C400HB Hoja de datos, Descripción, Manual

HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG80C400HB
1 23
DPG80C400HB
VRRM
I FAV
t rr
= 400 V
= 2x 40 A
= 45 ns
Backside: cathode
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Package: TO-247
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a

1 page




DPG80C400HB pdf
DPG80C400HB
Fast Diode
80
70
60
50
IF 40
[A] 30
20
10
TVJ = 150°C
25°C
0.8
TVJ = 125°C
0.7 VR = 270 V
0.6
Qrr
0.5
[μC]
0.4
0.3
80 A
40 A
20 A
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF versus VF
2.0
0.2
0
200 400 600
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
20
T = 125°C
VJ
VR = 270 V
16
IRM 12
[A]
8
80 A
40 A
20 A
4
0
Fig. 3
200 400 600
-diF /dt [A/μs]
Typ. reverse recov. current
IRM versus -diF /dt
1.4
120
1000
15
TVJ = 125°C
tfr
VFR
1.2 VR = 270 V
800 12
100
1.0
0.8
Kf
0.6
0.4 IRM
0.2 Qrr
0.0
0
40 80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
trr 80
[ns]
tfr 600
[ns] 400
9
VFR
6 [V]
80 A
60
40 A
20 A
40
0 200 400 600
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
200
0
0
TVJ = 125°C
VR = 270 V
IF = 40 A
200
400
3
0
600
-diF /dt [A/μs]
Fig. 6 Typ. forward recovery voltage
VFR & time tfr versus diF /dt
25 0.8
20
0.6
15
Erec
10
[μJ]
IF = 80 A
40 A
20 A
ZthJC
0.4
[K/W]
5
TVJ = 125°C
VR = 270 V
0
0 200 400 600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0.2
0.0
1
10 100 1000
t [ms]
Fig. 8 Transient thermal impedance junction to case
100 00
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a

5 Page










PáginasTotal 5 Páginas
PDF Descargar[ Datasheet DPG80C400HB.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
DPG80C400HBHigh Performance Fast Recovery DiodeIXYS
IXYS

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar