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PDF DPG10I400PM Data sheet ( Hoja de datos )
| Número de pieza | DPG10I400PM | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPG10I400PM
31
DPG10I400PM
VRRM
I FAV
t rr
=
=
=
400 V
10 A
45 ns
Backside: isolated
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-220FP
● Isolation Voltage: 2500 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Base plate: Plastic overmolded tab
● Reduced weight
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
1 page  
DPG10I400PM
Fast Diode
30
25
20
IF
15
[A]
10
5
TVJ = 125°C
TVJ = 25°C
0.4
T = 125°C
VJ
VR = 270 V
0.3
Qrr
[μC]
0.2
20 A
10 A
5A
12
TVJ = 125°C
VR = 270 V
10
IRM 8
[A] 6
4
20 A
10 A
5A
0
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF versus VF
2.0
0.1
0
100 200 300 400 500
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
2
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 3 Typ. reverse recov. current
IRM versus -diF /dt
1.4 100
TVJ = 125°C
1.2 VR = 270 V
80
1.0
0.8
Kf
0.6
IRM
0.4
0.2 Qrr
trr
60
[ns]
40
IF = 20 A
10 A
5A
0.0
0
40 80 120
TVJ [°C]
160
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
20
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
14 350
12 300
10
VFR 8
[V] 6
4
V
FR
TVJ = 125°C
IF = 10 A
VR = 270 V
250
20t0fr
[ns]
150
100
2 50
tfr
00
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 6 Typ. forward recovery voltage
VFR and tfr versus diF /dt
25
TVJ = 125°C
VR = 270 V
20
5
4
Erec 15
[μJ]10
IF = 5 A
10 A
20 A
ZthJC 3
[K/W] 2
5
0
0 100 200 300 400 500
-diF/dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
1
Remark: Thermal impedance curve do not reach static value after 10 s.
0
1
10
100
1000
10000
t [ms]
Fig. 8 Transient thermal resistance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DPG10I400PM.PDF ] | |
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