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PDF DPG10I400PA Data sheet ( Hoja de datos )
| Número de pieza | DPG10I400PA | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPG10I400PA
31
DPG10I400PA
VRRM
I FAV
t rr
=
=
=
400 V
10 A
45 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
1 page  
DPG10I400PA
Fast Diode
30
25
20
IF 15
[A]
10
5
TVJ = 125°C
TVJ = 25°C
0.4
TVJ = 125°C
VR = 270 V
0.3
Qrr
[μC]
0.2
20 A
10 A
5A
12
TVJ = 125°C
VR = 270 V
10
IRM 8
[A] 6
4
20 A
10 A
5A
0
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF versus VF
2.0
0.1
0
100 200 300 400 500
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
2
0 100 200 300 400 500
-diF/dt [A/μs]
Fig. 3 Typ. reverse recov. current
IRM versus -diF /dt
1.4
1.2
1.0
0.8
Kf
0.6
IRM
0.4
0.2 Qrr
100
IF = 20 A
80
10 A
trr
60
[ns]
5A
40
TVJ = 125°C
VR = 270 V
0.0
0
40 80 120
TVJ [°C]
160
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
20
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
14
T = 125°C
VJ
12 IF = 10 A
VR = 270 V
10
350
300
250
VFR8
[V] 6
4
VFR
2
200
15t0fr
[ns]
100
tfr
50
00
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 6 Typ. forward recovery voltage
VFR and tfr versus diF /dt
25
TVJ = 125°C
VR = 270 V
20
15
Erec
10
[μJ]
I =5A
F
10 A
20 A
5
3
2
ZthJC
[K/W]
1
0
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0
1 10 100 1000
t [ms]
Fig. 8 Transient thermal resistance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
10000
20131101a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DPG10I400PA.PDF ] | |
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