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PDF DPG120C300QB Data sheet ( Hoja de datos )
| Número de pieza | DPG120C300QB | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG120C300QB
1 23
DPG120C300QB
VRRM
I FAV
t rr
= 300 V
= 2x 60 A
= 35 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-3P
● Industry standard outline
compatible with TO-247
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a
1 page  
DPG120C300QB
Fast Diode
120
100
80
IF
60
[A]
40
TVJ = 150°C
20
25°C
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF versus VF
2.0
0.7
0.6
Qrr 0.5
IF = 120 A
60 A
30 A
[μC] 0.4
0.3
0.2
100
Fig. 2
TVJ = 125°C
VR = 200 V
200 300 400 500
-diF /dt [A/μs]
Typ. reverse recov. charge
Qrr versus -diF /dt
20
18
16
14
IRM
12
[A] 10
IF = 120 A
60 A
30 A
8
6
TVJ = 125°C
VR = 200 V
4
0 200 400 600
-diF /dt [A/μs]
Fig. 3 Typ. reverse recov. current
IRM versus -diF /dt
1.4
1.2
1.0
Kf 0.8
0.6
IRM
0.4
0.2 Qrr
0
40
80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
80
TVJ = 125°C
VR = 200 V
70
trr
60
[ns]
50
IF = 120 A
60 A
30 A
1000
900
800
700
tfr 600
[ns] 500
400
300
tfr
TVJ = 125°C
VR = 200 V
IF = 60 A
10
9
8
VFR
7
6VFR
[V]
5
4
3
40
0 200 400 600
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
200
0
2
200 400 600
-diF /dt [A/μs]
Fig. 6 Typ. forward recov. voltage
VFR & time tfr versus diF /dt
16
IF = 120 A
60 A
12 30 A
1.0
Erec
8
[μJ]
ZthJC
[K/W]
4
TVJ = 125°C
VR = 200 V
100 200 300 400 500
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0.1
100 101 102 103
t [ms]
Fig. 8 Transient thermal impedance junction to case
104
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DPG120C300QB.PDF ] | |
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