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PDF DPG30P300PJ Data sheet ( Hoja de datos )
| Número de pieza | DPG30P300PJ | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Phase leg
Part number
DPG30P300PJ
1 23
DPG30P300PJ
VRRM
I FAV
t rr
= 2x 300 V
= 30 A
= 35 ns
Backside: isolated
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: ISOPLUS220
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a
1 page  
DPG30P300PJ
Fast Diode
80 0.6
70
60
50
IF
40
[A] 30
TVJ = 150°C
0.5
Qrr 0.4
IF = 60 A
30 A
15 A
[μC] 0.3
20
25°C
10
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF versus VF
2.0
0.2
0.1
0
Fig. 2
TVJ = 125°C
VR = 200 V
200 400 600
-diF /dt [A/μs]
Typ. reverse recov. charge
Qrr versus -diF /dt
18
16
14
IRM 12
IF = 60 A
30 A
15 A
[A] 10
8
6 TVJ = 125°C
VR = 200 V
4
0
Fig. 3
200 400 600
-diF /dt [A/μs]
Typ. reverse recov. current
IRM versus -diF /dt
1.6
1.4
1.2
1.0
Kf 0.8
0.6
IRM
0.4
0.2 Qrr
80
70
trr
60
[ns]
IF = 60 A
50 30 A
15 A
T = 125°C
VJ
VR = 200 V
700
tfr
600
500
tfr
400
[ns]
300
200
7
VFR
6
TVJ = 125°C
VR = 200 V
IF = 30 A
5
VFR
4
[V]
3
2
0.0
0
40 80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
40
0 200 400 600
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
100
0
1
200 400 600
-diF /dt [A/μs]
Fig. 6 Typ. forward recovery voltage
VFR & time tfr versus diF /dt
12
TVJ = 125°C
10 VR = 200 V
1.2
1.0
8
Erec
6
[μJ]
4
IF = 60 A
30 A
15 A
0.8
ZthJC
0.6
[K/W]
0.4
2 0.2
0
0 200 400 600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0.0
1
10 100 1000
t [ms]
Fig. 8 Transient thermal impedance junction to case
100 00
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DPG30P300PJ.PDF ] | |
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