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PDF DPG30I300HA Data sheet ( Hoja de datos )

Número de pieza DPG30I300HA
Descripción High Performance Fast Recovery Diode
Fabricantes IXYS 
Logotipo IXYS Logotipo



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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPG30I300HA
31
DPG30I300HA
VRRM
I FAV
t rr
=
=
=
300 V
30 A
35 ns
Backside: cathode
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Package: TO-247
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125b

1 page




DPG30I300HA pdf
DPG30I300HA
Fast Diode
60
0.5
16
50
40
IF
30
[A]
20
TVJ = 150°C
12 5°C
10
25°C
0.4
Qr 0.3
IF = 60 A
30 A
15 A
[μC] 0.2
0.1 TVJ = 125°C
VR = 200 V
12
IRM
8
[A]
4
IF = 60 A
30 A
15 A
TVJ = 125°C
VR = 200 V
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF versus VF
2.0
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qr versus -diF /dt
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
1.4
VR = 200 V
1.2
IF = 30 A
diF/dt = 500 A/µs
1.0
Kf 0.8
0.6
IRM
0.4 Qrr
80 TVJ = 125°C
VR = 200 V
70
60
trr
50
[ns]
40
IF = 60 A
30 A
15 A
30
800 tfr
700
600
tfr 500
400
[ns]
300
200
100
TVJ = 125°C
VR = 200 V
IF = 30 A
16
14
12
VFR
10
8 VFR
[V]
6
4
2
0.2
0
40 80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qr, IRM versus TVJ
20
0 100 200 300 400
-diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
500
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
14
TVJ = 125°C
12 VR = 200 V
1
10
Erec
8
[μJ]
6
IF = 5 A
10 A
20 A
4
2
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
ZthJC
[K/W]
0.1
0.00 1
0.0 1
0.1
t [s]
Rthi [K/W]
0.1311
0.1377
0.3468
0.2394
0.095
1
Fig. 8 Transient thermal impedance junction to case
ti [s]
0.0018
0.002
0.012
0.07
0.345
10
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125b

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