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PDF DH2x61-18A Data sheet ( Hoja de datos )

Número de pieza DH2x61-18A
Descripción High Performance Fast Recovery Diode
Fabricantes IXYS 
Logotipo IXYS Logotipo



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Sonic Fast Recovery Diode
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Parallel legs
Part number
DH2x61-18A
21
34
DH2x61-18A
VRRM
I FAV
t rr
= 1800 V
= 2x 60 A
= 230 ns
Backside: Isolated
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Package: SOT-227B (minibloc)
Isolation Voltage: 3000 V~
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Base plate: Copper
internally DCB isolated
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20110908b

1 page




DH2x61-18A pdf
DH2x61-18A
Fast Diode
140
120
100
IF 80
[A] 60
40
TVJ = 125°C
20
TVJ = 25°C
0
012
VF [V]
Fig. 1 Typ. rward current
IF versus VF
3
40
TVJ = 100°C
VR = 1200 V
30
Qr
20
[nC]
10
IF = 60 A
100
TVJ = 100°C
VR = 1200 V
80
IRM 60
IF = 60 A
[A] 40
20
0
100 1000
-diF /dt [A/µs]
Fig. 2 Typ. reverse recovery charge
Qr versus -diF /dt
0
0 400 800 1200 1600
-diF /dt [A/µs]
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
2.0
1.5
Kf 1.0
IRM
Qr
0.5
1400
1200
1000
trr 800
[ns] 600
400
200
TVJ = 100°C
VR = 1200 V
150
120
TVJ = 100°C
VR = 1200 V
IF = 60 A
VFR 90
[V] 60
30
VFR
2.5
2.0
tfr
1.5
[µs]
1.0
tfr
0.5
0.0
0
40 80 120 160
TVJ [°C]
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
0
0 400 800 1200
-diF /dt [A/µs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
1600
0 0.0
0 200 400 600 800 1000
diF /dt [A/µs]
Fig. 6 Typ. peak forward voltage
VFR & typ. forward recovery
time tfr versus diF /dt
100
ZthJC
10-1
[K/W]
Constants for ZthJC calculation:
i Rthi (K/W)
ti (s)
1 0.212
0.0055
2 0.248
0.0092
3 0.063
0.0007
4 0.077
0.0391
10-2
10-3
10-2
10-1
t [s]
100
Fig. 7 Transient thermal resistance junction to case
101
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20110908b

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