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Número de pieza DMA150E1600NA
Descripción Standard Rectifier
Fabricantes IXYS 
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Standard Rectifier
Single Diode
Part number
DMA150E1600NA
21
34
DMA150E1600NA
VRRM
I FAV
VF
=
=
=
1600 V
150 A
1.05 V
Backside: Isolated
Features / Advantages:
Planar passivated chips
Very low leakage current
Very low forward voltage drop
Improved thermal behaviour
Applications:
Diode for main rectification
For single and three phase
bridge configurations
Package: SOT-227B (minibloc)
Isolation Voltage: 3000 V~
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Base plate: Copper
internally DCB isolated
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130117a

1 page




DMA150E1600NA pdf
DMA150E1600NA
Rectifier
300
250
2500
2250
50 Hz, 80%V
RRM
105
VR = 0 V
200
IF
150
[A]
100
TVJ = 150°C
TVJ = 125°C
TVJ = 25°C
50
2000
IFSM
1750
[A]
1500
1250
TVJ = 45°C
TVJ = 150°C
0
0.5 1.0 1.5
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
1000
0.001
0.01
0.1
1
t [s]
Fig. 2 Surge overload current
I2t
[A2s]
T = 45°C
VJ
T = 150°C
VJ
104
1
2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I2t versus time per diode
200
160
P1to2t0
[W8]0
DC =
1
0.5
0.4
0.33
0.17
0.08
40
RthHA =
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
350
300
250
200
IF(AV)M
150
[A]
100
50
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175
IF(AV)M [A]
Tamb [°C]
Fig. 4 Power dissipation versus direct output current and ambient temperature
0
0 25 50 75 100 125 150 175
[°C]
Fig. 5 Max. forward current versus
case temperature
0.20
0.16
ZthJC
0.12
[K/W]
0.08
0.04
0.00
1
10 100
t [ms]
Fig. 6 Transient thermal impedance junction to case
1000
10000
Constants for ZthJC calculation:
i Rthi (K/W)
ti (s)
1 0.017
0.01
2 0.013
0.00001
3 0.010
0.01
4 0.04
0.04
5 0.12
0.3
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130117a

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